Bipolar Junction Transistors (BJT) and integrated Darlington pairs have been developed in 4H-SiC. The 3 mm × 3 mm BJTs show an on-state current of 20 A at a forward drop of 1.2 V at room temperature. The smaller 2 mm × 2 mm devices were tested up to 325°C. The on-resistance increases and the current gain reduces with increasing temperature. The reverse leakage current was measured to be less than 40 μA at 1000 V and 325°C. Inductive switching at 1000 V, 5 A shows extremely fast turn-on and turn-off behavior.
|Number of pages||4|
|State||Published - 2004|
|Event||Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (ISPSD'04) - Kitakyushu, Japan|
Duration: May 24 2004 → May 27 2004
|Conference||Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (ISPSD'04)|
|Period||05/24/04 → 05/27/04|