Recent progress in SiC Bipolar Junction Transistors

Anant K. Agarwal; Sei Hyung Ryu; James Richmond; Craig Capell; John W. Palmour; Santosh Balachandran; T. Paul Chow; Bruce Geil; Stephen Bayne; Charles Scozzie; Kenneth A. Jones

Recent progress in SiC Bipolar Junction Transistors

Anant K. Agarwal, Sei Hyung Ryu, James Richmond, Craig Capell, John W. Palmour, Santosh Balachandran, T. Paul Chow, Bruce Geil, Stephen Bayne, Charles Scozzie, Kenneth A. Jones

Electrical and Computer Engineering

Research output: Contribution to conference › Paper › peer-review

20 Scopus citations

Abstract

Bipolar Junction Transistors (BJT) and integrated Darlington pairs have been developed in 4H-SiC. The 3 mm × 3 mm BJTs show an on-state current of 20 A at a forward drop of 1.2 V at room temperature. The smaller 2 mm × 2 mm devices were tested up to 325°C. The on-resistance increases and the current gain reduces with increasing temperature. The reverse leakage current was measured to be less than 40 μA at 1000 V and 325°C. Inductive switching at 1000 V, 5 A shows extremely fast turn-on and turn-off behavior.

Original language	English
Pages	361-364
Number of pages	4
State	Published - 2004
Event	Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (ISPSD'04) - Kitakyushu, Japan Duration: May 24 2004 → May 27 2004

Conference

Conference	Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (ISPSD'04)
Country/Territory	Japan
City	Kitakyushu
Period	05/24/04 → 05/27/04

Cite this

Agarwal, Anant K. ; Ryu, Sei Hyung ; Richmond, James ; Capell, Craig ; Palmour, John W. ; Balachandran, Santosh ; Chow, T. Paul ; Geil, Bruce ; Bayne, Stephen ; Scozzie, Charles ; Jones, Kenneth A. / Recent progress in SiC Bipolar Junction Transistors. Paper presented at Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (ISPSD'04), Kitakyushu, Japan.4 p.

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author = "Agarwal, {Anant K.} and Ryu, {Sei Hyung} and James Richmond and Craig Capell and Palmour, {John W.} and Santosh Balachandran and Chow, {T. Paul} and Bruce Geil and Stephen Bayne and Charles Scozzie and Jones, {Kenneth A.}",

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Recent progress in SiC Bipolar Junction Transistors. / Agarwal, Anant K.; Ryu, Sei Hyung; Richmond, James; Capell, Craig; Palmour, John W.; Balachandran, Santosh; Chow, T. Paul; Geil, Bruce; Bayne, Stephen; Scozzie, Charles; Jones, Kenneth A.

2004. 361-364 Paper presented at Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (ISPSD'04), Kitakyushu, Japan.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Recent progress in SiC Bipolar Junction Transistors

AU - Agarwal, Anant K.

AU - Ryu, Sei Hyung

AU - Richmond, James

AU - Capell, Craig

AU - Palmour, John W.

AU - Balachandran, Santosh

AU - Chow, T. Paul

AU - Geil, Bruce

AU - Bayne, Stephen

AU - Scozzie, Charles

AU - Jones, Kenneth A.

PY - 2004

Y1 - 2004

N2 - Bipolar Junction Transistors (BJT) and integrated Darlington pairs have been developed in 4H-SiC. The 3 mm × 3 mm BJTs show an on-state current of 20 A at a forward drop of 1.2 V at room temperature. The smaller 2 mm × 2 mm devices were tested up to 325°C. The on-resistance increases and the current gain reduces with increasing temperature. The reverse leakage current was measured to be less than 40 μA at 1000 V and 325°C. Inductive switching at 1000 V, 5 A shows extremely fast turn-on and turn-off behavior.

AB - Bipolar Junction Transistors (BJT) and integrated Darlington pairs have been developed in 4H-SiC. The 3 mm × 3 mm BJTs show an on-state current of 20 A at a forward drop of 1.2 V at room temperature. The smaller 2 mm × 2 mm devices were tested up to 325°C. The on-resistance increases and the current gain reduces with increasing temperature. The reverse leakage current was measured to be less than 40 μA at 1000 V and 325°C. Inductive switching at 1000 V, 5 A shows extremely fast turn-on and turn-off behavior.

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AN - SCOPUS:4944263808

SP - 361

EP - 364

Y2 - 24 May 2004 through 27 May 2004

ER -

Recent progress in SiC Bipolar Junction Transistors

Abstract

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