Abstract
Bipolar Junction Transistors (BJT) and integrated Darlington pairs have been developed in 4H-SiC. The 3 mm × 3 mm BJTs show an on-state current of 20 A at a forward drop of 1.2 V at room temperature. The smaller 2 mm × 2 mm devices were tested up to 325°C. The on-resistance increases and the current gain reduces with increasing temperature. The reverse leakage current was measured to be less than 40 μA at 1000 V and 325°C. Inductive switching at 1000 V, 5 A shows extremely fast turn-on and turn-off behavior.
Original language | English |
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Pages | 361-364 |
Number of pages | 4 |
State | Published - 2004 |
Event | Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (ISPSD'04) - Kitakyushu, Japan Duration: May 24 2004 → May 27 2004 |
Conference
Conference | Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (ISPSD'04) |
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Country/Territory | Japan |
City | Kitakyushu |
Period | 05/24/04 → 05/27/04 |