Recent progress in SiC Bipolar Junction Transistors

Anant K. Agarwal, Sei Hyung Ryu, James Richmond, Craig Capell, John W. Palmour, Santosh Balachandran, T. Paul Chow, Bruce Geil, Stephen Bayne, Charles Scozzie, Kenneth A. Jones

Research output: Contribution to conferencePaperpeer-review

19 Scopus citations

Abstract

Bipolar Junction Transistors (BJT) and integrated Darlington pairs have been developed in 4H-SiC. The 3 mm × 3 mm BJTs show an on-state current of 20 A at a forward drop of 1.2 V at room temperature. The smaller 2 mm × 2 mm devices were tested up to 325°C. The on-resistance increases and the current gain reduces with increasing temperature. The reverse leakage current was measured to be less than 40 μA at 1000 V and 325°C. Inductive switching at 1000 V, 5 A shows extremely fast turn-on and turn-off behavior.

Original languageEnglish
Pages361-364
Number of pages4
StatePublished - 2004
EventProceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (ISPSD'04) - Kitakyushu, Japan
Duration: May 24 2004May 27 2004

Conference

ConferenceProceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (ISPSD'04)
CountryJapan
CityKitakyushu
Period05/24/0405/27/04

Fingerprint Dive into the research topics of 'Recent progress in SiC Bipolar Junction Transistors'. Together they form a unique fingerprint.

Cite this