Recent advances in III-nitride UV materials and Devices

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Abstract

Some of the recent progresses in epitaxial growth, fundamental studies of high Al content AlGaN alloys with Si and Mg doping, and UV LED fabrication are presented. For Si doped Al 0.7Ga 0.3N, a room temperature ntype resistivity as low as 0.0075 Ωcm has been obtained. The resistivity was observed to increase by one order of magnitude as the Al content was increased by about 8%, due to the deepening of the Si donor level. We have also achieved n-AIN with a free electron concentration and mobility of about 1.0 × 10 17cm -3 and 2 cm 2/Vs, respectively. For Mg doping, a binding energy of 0.51 eV for Mg acceptor in AlN was determined. The Mg acceptor activation energy in Al xGa 1-xN as a function of the Al content was extrapolated for the entire AlN composition range. Finally, the results of our UV (317 nm) LEDs are reported, and the current crowding effect was discussed.

Original languageEnglish
Pages24-33
Number of pages10
StatePublished - 2004
EventState-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium - San Antonio, TX, United States
Duration: May 9 2004May 14 2004

Conference

ConferenceState-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium
CountryUnited States
CitySan Antonio, TX
Period05/9/0405/14/04

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    Fan, Z. Y., Lin, J. Y., & Jiang, H. X. (2004). Recent advances in III-nitride UV materials and Devices. 24-33. Paper presented at State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium, San Antonio, TX, United States.