Recent advances in III-nitride ultraviolet photonic materials and devices

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This paper summarizes some of the recent advances made on III-nitride ultraviolet photonics materials and devices. In particular, the growth and characterization of AlGaN alloys are discussed in detail. It was shown that AlGaN could be made n-type for x up to 1 (pure AlN). Time-resolved photoluminescence (PL) studies carried out on these materials have shown that Si-doping reduces the effect of carrier localization in AlxGa1-xN alloys and a sharp drop in carrier localization energy occurs when the Si doping concentration increases above 1 × 1018 cm-3, which directly correlates with the observed electrical properties. For the Mg-doped AlxGa1-xN alloys, p-type conduction was achieved for x up to 0.27. From the Mg acceptor activation energy as a function of Al content, the resistivity of Mg-doped AlxGa1-xN with high Al contents can be estimated. For example, the projected resistivity of AlxGa1-xN (x=0.45) is around 2.2 × 104 Ω-cm. Thus alternative methods for acceptor activation in AlGaN or InAlGaN with high Al contents must be developed before the high performance deep UV emitters can be realized.

Original languageEnglish
Pages (from-to)S535-S541
JournalJournal of the Korean Physical Society
Issue numberSPEC.
StatePublished - Feb 2003
EventProceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of
Duration: Aug 20 2002Aug 23 2002


  • AlGaN
  • Optical transitions
  • Time-resolved PL
  • UV light emitters
  • Wide bandgap


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