“Rattling Impurities in Si and Ge Clathrates”

Charles Myles; Koushik Biswas; Emmanuel Nenghabi

“Rattling Impurities in Si and Ge Clathrates”

Charles Myles, Koushik Biswas, Emmanuel Nenghabi

Research output: Contribution to conference › Paper

Abstract

After an introduction to semiconductor clathrates, the results of calculations of the vibrational properties of some experimentally relevant Si- and Ge-based Type I and Type II clathrates are presented. The calculations were carried out using a first-principles, planewave, pseudopotential method. Results for the Si-based Type II materials Cs8Ga8Si128 and Rb8Ga8Si128, and for the Ge-based Type I materials Ba8Ga16Ge30 and Ba8Ga16Si5Ge25 will be discussed with an emphasis on the very low frequency rattling modes of the guest impurities.

Original language	English
State	Published - Nov 1 2007

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Myles, C., Biswas, K., & Nenghabi, E. (2007). “Rattling Impurities in Si and Ge Clathrates”.

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abstract = "After an introduction to semiconductor clathrates, the results of calculations of the vibrational properties of some experimentally relevant Si- and Ge-based Type I and Type II clathrates are presented. The calculations were carried out using a first-principles, planewave, pseudopotential method. Results for the Si-based Type II materials Cs8Ga8Si128 and Rb8Ga8Si128, and for the Ge-based Type I materials Ba8Ga16Ge30 and Ba8Ga16Si5Ge25 will be discussed with an emphasis on the very low frequency rattling modes of the guest impurities.",

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TY - CONF

T1 - “Rattling Impurities in Si and Ge Clathrates”

AU - Myles, Charles

AU - Biswas, Koushik

AU - Nenghabi, Emmanuel

PY - 2007/11/1

Y1 - 2007/11/1

N2 - After an introduction to semiconductor clathrates, the results of calculations of the vibrational properties of some experimentally relevant Si- and Ge-based Type I and Type II clathrates are presented. The calculations were carried out using a first-principles, planewave, pseudopotential method. Results for the Si-based Type II materials Cs8Ga8Si128 and Rb8Ga8Si128, and for the Ge-based Type I materials Ba8Ga16Ge30 and Ba8Ga16Si5Ge25 will be discussed with an emphasis on the very low frequency rattling modes of the guest impurities.

AB - After an introduction to semiconductor clathrates, the results of calculations of the vibrational properties of some experimentally relevant Si- and Ge-based Type I and Type II clathrates are presented. The calculations were carried out using a first-principles, planewave, pseudopotential method. Results for the Si-based Type II materials Cs8Ga8Si128 and Rb8Ga8Si128, and for the Ge-based Type I materials Ba8Ga16Ge30 and Ba8Ga16Si5Ge25 will be discussed with an emphasis on the very low frequency rattling modes of the guest impurities.

M3 - Paper

ER -