Rate equation model of high-temperature performance of InGaAsP quantum well lasers

A steady-state phenomenological rate equation model illuminating the temperature sensitivity of the threshold current and slope efficiency in compressively strained quaternary InGaAsP multiquantum-well (SL-MQW) lasers was reported. Investigation of the parameter sensitivity of the model afforded the identification of differential gain and the carrier density at transparency as the main causes of the high-temperature sensitivity of the threshold current in these lasers. It was determined that the differential efficiency was primarily affected by the absorption losses. Carrier spillover into the barrier and SCH layers at higher temperatures were significant in the temperature dependence of both the threshold current and differential efficiency.