Rate equation model of high-temperature performance of InGaAsP quantum well lasers

A. A. Bernussi; J. Pikal; H. Temkin; D. L. Coblentz; R. A. Logan

Rate equation model of high-temperature performance of InGaAsP quantum well lasers

A. A. Bernussi, J. Pikal, H. Temkin, D. L. Coblentz, R. A. Logan

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We present a steady-state phenomenological rate equation model describing the temperature dependence of the threshold current and slope efficiency of compressively strained InGaAsP multiquantum well lasers. The model is supported by measurements of differential carrier lifetime and gain carried out as a function of temperature. Differential gain, carrier density at transparency, and internal losses are shown to be the key parameters controlling the temperature sensitivity of our devices.

Original language	English
Pages (from-to)	3600
Number of pages	1
Journal	Applied Physics Letters
Volume	66
State	Published - 1995

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@article{0374f72e7db44f629a499b98d54c5f45,

title = "Rate equation model of high-temperature performance of InGaAsP quantum well lasers",

abstract = "We present a steady-state phenomenological rate equation model describing the temperature dependence of the threshold current and slope efficiency of compressively strained InGaAsP multiquantum well lasers. The model is supported by measurements of differential carrier lifetime and gain carried out as a function of temperature. Differential gain, carrier density at transparency, and internal losses are shown to be the key parameters controlling the temperature sensitivity of our devices.",

author = "Bernussi, {A. A.} and J. Pikal and H. Temkin and Coblentz, {D. L.} and Logan, {R. A.}",

year = "1995",

language = "English",

volume = "66",

pages = "3600",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AIP Publishing",

}

TY - JOUR

T1 - Rate equation model of high-temperature performance of InGaAsP quantum well lasers

AU - Bernussi, A. A.

AU - Pikal, J.

AU - Temkin, H.

AU - Coblentz, D. L.

AU - Logan, R. A.

PY - 1995

Y1 - 1995

N2 - We present a steady-state phenomenological rate equation model describing the temperature dependence of the threshold current and slope efficiency of compressively strained InGaAsP multiquantum well lasers. The model is supported by measurements of differential carrier lifetime and gain carried out as a function of temperature. Differential gain, carrier density at transparency, and internal losses are shown to be the key parameters controlling the temperature sensitivity of our devices.

AB - We present a steady-state phenomenological rate equation model describing the temperature dependence of the threshold current and slope efficiency of compressively strained InGaAsP multiquantum well lasers. The model is supported by measurements of differential carrier lifetime and gain carried out as a function of temperature. Differential gain, carrier density at transparency, and internal losses are shown to be the key parameters controlling the temperature sensitivity of our devices.

UR - http://www.scopus.com/inward/record.url?scp=36449001118&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:36449001118

SN - 0003-6951

VL - 66

SP - 3600

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Rate equation model of high-temperature performance of InGaAsP quantum well lasers

Abstract

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