Rare earth-doped III-N light emitting diodes

J. M. Zavada; K. H. Kim; J. Y. Lin; H. X. Jiang; P. Chow; B. Hertog

Rare earth-doped III-N light emitting diodes

J. M. Zavada, K. H. Kim, J. Y. Lin, H. X. Jiang, P. Chow, B. Hertog

Electrical and Computer Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

In this paper, we report on the synthesis and demonstration of erbium (Er)-doped III-N p-i-n light-emitting diodes (LEDs). The device structures were grown through a combination of metal-organic chemical vapor deposition and molecular beam epitaxy on c-plane sapphire substrates. Structures, consisting of n-AlGaN/GaN:Er/p-AlGaN layers, were processed into LED devices using standard etching and contacting methods. A variety of LEDs with different sizes and geometric shapes were produced and tested under both forward and reverse bias conditions. Typically, the emission under reverse bias was 5-10 times more intense than that under forward bias. Visible emission (at ∼537 and 558 nm) was observed at 300 K and the power output of the brightest LEDs was approximately 2.5 W/m ². From the emission characteristics, the Er excitation cross-section was estimated as ∼ 3.5×10 ^-17 cm ² under reverse bias. Under forward bias, the excitation cross-section was slightly higher, ∼ 4.7×10 ^-17 cm ².

Original language	English
Pages	205-214
Number of pages	10
State	Published - 2004
Event	State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia - Honolulu, HI, United States Duration: Oct 3 2004 → Oct 8 2004

Conference

Conference	State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia
Country/Territory	United States
City	Honolulu, HI
Period	10/3/04 → 10/8/04

Cite this

Zavada, J. M., Kim, K. H., Lin, J. Y., Jiang, H. X., Chow, P., & Hertog, B. (2004). Rare earth-doped III-N light emitting diodes. 205-214. Paper presented at State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States.

@conference{8971d9ea281d4df79387982d27d5c4a3,

title = "Rare earth-doped III-N light emitting diodes",

abstract = "In this paper, we report on the synthesis and demonstration of erbium (Er)-doped III-N p-i-n light-emitting diodes (LEDs). The device structures were grown through a combination of metal-organic chemical vapor deposition and molecular beam epitaxy on c-plane sapphire substrates. Structures, consisting of n-AlGaN/GaN:Er/p-AlGaN layers, were processed into LED devices using standard etching and contacting methods. A variety of LEDs with different sizes and geometric shapes were produced and tested under both forward and reverse bias conditions. Typically, the emission under reverse bias was 5-10 times more intense than that under forward bias. Visible emission (at ∼537 and 558 nm) was observed at 300 K and the power output of the brightest LEDs was approximately 2.5 W/m 2. From the emission characteristics, the Er excitation cross-section was estimated as ∼ 3.5×10 -17 cm 2 under reverse bias. Under forward bias, the excitation cross-section was slightly higher, ∼ 4.7×10 -17 cm 2.",

author = "Zavada, {J. M.} and Kim, {K. H.} and Lin, {J. Y.} and Jiang, {H. X.} and P. Chow and B. Hertog",

year = "2004",

language = "English",

pages = "205--214",

note = "State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia ; Conference date: 03-10-2004 Through 08-10-2004",

}

Zavada, JM, Kim, KH, Lin, JY , Jiang, HX, Chow, P & Hertog, B 2004, 'Rare earth-doped III-N light emitting diodes', Paper presented at State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States, 10/3/04 - 10/8/04 pp. 205-214.

Rare earth-doped III-N light emitting diodes. / Zavada, J. M.; Kim, K. H.; Lin, J. Y. et al.
2004. 205-214 Paper presented at State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Rare earth-doped III-N light emitting diodes

AU - Zavada, J. M.

AU - Kim, K. H.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Chow, P.

AU - Hertog, B.

PY - 2004

Y1 - 2004

N2 - In this paper, we report on the synthesis and demonstration of erbium (Er)-doped III-N p-i-n light-emitting diodes (LEDs). The device structures were grown through a combination of metal-organic chemical vapor deposition and molecular beam epitaxy on c-plane sapphire substrates. Structures, consisting of n-AlGaN/GaN:Er/p-AlGaN layers, were processed into LED devices using standard etching and contacting methods. A variety of LEDs with different sizes and geometric shapes were produced and tested under both forward and reverse bias conditions. Typically, the emission under reverse bias was 5-10 times more intense than that under forward bias. Visible emission (at ∼537 and 558 nm) was observed at 300 K and the power output of the brightest LEDs was approximately 2.5 W/m 2. From the emission characteristics, the Er excitation cross-section was estimated as ∼ 3.5×10 -17 cm 2 under reverse bias. Under forward bias, the excitation cross-section was slightly higher, ∼ 4.7×10 -17 cm 2.

AB - In this paper, we report on the synthesis and demonstration of erbium (Er)-doped III-N p-i-n light-emitting diodes (LEDs). The device structures were grown through a combination of metal-organic chemical vapor deposition and molecular beam epitaxy on c-plane sapphire substrates. Structures, consisting of n-AlGaN/GaN:Er/p-AlGaN layers, were processed into LED devices using standard etching and contacting methods. A variety of LEDs with different sizes and geometric shapes were produced and tested under both forward and reverse bias conditions. Typically, the emission under reverse bias was 5-10 times more intense than that under forward bias. Visible emission (at ∼537 and 558 nm) was observed at 300 K and the power output of the brightest LEDs was approximately 2.5 W/m 2. From the emission characteristics, the Er excitation cross-section was estimated as ∼ 3.5×10 -17 cm 2 under reverse bias. Under forward bias, the excitation cross-section was slightly higher, ∼ 4.7×10 -17 cm 2.

UR - http://www.scopus.com/inward/record.url?scp=17044405967&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:17044405967

SP - 205

EP - 214

T2 - State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia

Y2 - 3 October 2004 through 8 October 2004

ER -

Rare earth-doped III-N light emitting diodes

Abstract

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