Rare earth-doped III-N light emitting diodes

J. M. Zavada, K. H. Kim, J. Y. Lin, H. X. Jiang, P. Chow, B. Hertog

Research output: Contribution to conferencePaperpeer-review

Abstract

In this paper, we report on the synthesis and demonstration of erbium (Er)-doped III-N p-i-n light-emitting diodes (LEDs). The device structures were grown through a combination of metal-organic chemical vapor deposition and molecular beam epitaxy on c-plane sapphire substrates. Structures, consisting of n-AlGaN/GaN:Er/p-AlGaN layers, were processed into LED devices using standard etching and contacting methods. A variety of LEDs with different sizes and geometric shapes were produced and tested under both forward and reverse bias conditions. Typically, the emission under reverse bias was 5-10 times more intense than that under forward bias. Visible emission (at ∼537 and 558 nm) was observed at 300 K and the power output of the brightest LEDs was approximately 2.5 W/m 2. From the emission characteristics, the Er excitation cross-section was estimated as ∼ 3.5×10 -17 cm 2 under reverse bias. Under forward bias, the excitation cross-section was slightly higher, ∼ 4.7×10 -17 cm 2.

Original languageEnglish
Pages205-214
Number of pages10
StatePublished - 2004
EventState-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia - Honolulu, HI, United States
Duration: Oct 3 2004Oct 8 2004

Conference

ConferenceState-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia
CountryUnited States
CityHonolulu, HI
Period10/3/0410/8/04

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