In this paper, we report on the synthesis and demonstration of erbium (Er)-doped III-N p-i-n light-emitting diodes (LEDs). The device structures were grown through a combination of metal-organic chemical vapor deposition and molecular beam epitaxy on c-plane sapphire substrates. Structures, consisting of n-AlGaN/GaN:Er/p-AlGaN layers, were processed into LED devices using standard etching and contacting methods. A variety of LEDs with different sizes and geometric shapes were produced and tested under both forward and reverse bias conditions. Typically, the emission under reverse bias was 5-10 times more intense than that under forward bias. Visible emission (at ∼537 and 558 nm) was observed at 300 K and the power output of the brightest LEDs was approximately 2.5 W/m 2. From the emission characteristics, the Er excitation cross-section was estimated as ∼ 3.5×10 -17 cm 2 under reverse bias. Under forward bias, the excitation cross-section was slightly higher, ∼ 4.7×10 -17 cm 2.
|Number of pages||10|
|State||Published - 2004|
|Event||State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia - Honolulu, HI, United States|
Duration: Oct 3 2004 → Oct 8 2004
|Conference||State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia|
|Period||10/3/04 → 10/8/04|