Rare earth doped GaN for photonic devices

V. X. Ho, H. X. Jiang, J. Y. Lin, J. M. Zavada, N. Q. Vinh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


We report excitation mechanisms, quantum efficiency as well as the thermal quenching of photoluminescence processes in rare earth ions (Er and Nd) in GaN grown by metal organic chemical vapor deposition.

Original languageEnglish
Title of host publicationAdvanced Photonics, IPRSN 2017
PublisherOSA - The Optical Society
ISBN (Electronic)9781557528209
StatePublished - 2017
EventAdvanced Photonics, IPRSN 2017 - New Orleans, United States
Duration: Jul 24 2017Jul 27 2017

Publication series

NameOptics InfoBase Conference Papers
VolumePart F52-IPRSN 2017


ConferenceAdvanced Photonics, IPRSN 2017
Country/TerritoryUnited States
CityNew Orleans


Dive into the research topics of 'Rare earth doped GaN for photonic devices'. Together they form a unique fingerprint.

Cite this