Rapid photoluminescence intensity degradation in porous silicon

P. Basmaji, A. A. Bernussi, J. C. Rossi, B. Matvienko

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Rapid photoluminescence intensity degradation are observed in porous silicon layers formed at different preparation conditions. The decay rate, ranging from 0.5 to tens of seconds, is found to be a function of illumination intensity, sample temperature and emission wavelength. We attributed the degradation effect to photochemical reactions on the surface.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
PublisherPubl by Materials Research Society
Pages233-238
Number of pages6
ISBN (Print)1558991786
StatePublished - 1993
EventProceedings of the Second Symposium on Dynamics in Small Confining Systems - Boston, MA, USA
Duration: Nov 30 1992Dec 4 1992

Publication series

NameMaterials Research Society Symposium Proceedings
Volume283
ISSN (Print)0272-9172

Conference

ConferenceProceedings of the Second Symposium on Dynamics in Small Confining Systems
CityBoston, MA, USA
Period11/30/9212/4/92

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    Basmaji, P., Bernussi, A. A., Rossi, J. C., & Matvienko, B. (1993). Rapid photoluminescence intensity degradation in porous silicon. In Materials Research Society Symposium Proceedings (pp. 233-238). (Materials Research Society Symposium Proceedings; Vol. 283). Publ by Materials Research Society.