Rapid photoluminescence intensity degradation in porous silicon

P. Basmaji; A. A. Bernussi; J. C. Rossi; B. Matvienko

Rapid photoluminescence intensity degradation in porous silicon

P. Basmaji, A. A. Bernussi, J. C. Rossi, B. Matvienko

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Rapid photoluminescence intensity degradation are observed in porous silicon layers formed at different preparation conditions. The decay rate, ranging from 0.5 to tens of seconds, is found to be a function of illumination intensity, sample temperature and emission wavelength. We attributed the degradation effect to photochemical reactions on the surface.

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings
Publisher	Publ by Materials Research Society
Pages	233-238
Number of pages	6
ISBN (Print)	1558991786
State	Published - 1993
Event	Proceedings of the Second Symposium on Dynamics in Small Confining Systems - Boston, MA, USA Duration: Nov 30 1992 → Dec 4 1992

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	283
ISSN (Print)	0272-9172

Conference

Conference	Proceedings of the Second Symposium on Dynamics in Small Confining Systems
City	Boston, MA, USA
Period	11/30/92 → 12/4/92

Cite this

@inproceedings{199539fef1974ad9bf4d63e1166b3df8,

title = "Rapid photoluminescence intensity degradation in porous silicon",

abstract = "Rapid photoluminescence intensity degradation are observed in porous silicon layers formed at different preparation conditions. The decay rate, ranging from 0.5 to tens of seconds, is found to be a function of illumination intensity, sample temperature and emission wavelength. We attributed the degradation effect to photochemical reactions on the surface.",

author = "P. Basmaji and Bernussi, {A. A.} and Rossi, {J. C.} and B. Matvienko",

year = "1993",

language = "English",

isbn = "1558991786",

series = "Materials Research Society Symposium Proceedings",

publisher = "Publ by Materials Research Society",

pages = "233--238",

booktitle = "Materials Research Society Symposium Proceedings",

note = "Proceedings of the Second Symposium on Dynamics in Small Confining Systems ; Conference date: 30-11-1992 Through 04-12-1992",

}

Basmaji, P, Bernussi, AA, Rossi, JC & Matvienko, B 1993, Rapid photoluminescence intensity degradation in porous silicon. in Materials Research Society Symposium Proceedings. Materials Research Society Symposium Proceedings, vol. 283, Publ by Materials Research Society, pp. 233-238, Proceedings of the Second Symposium on Dynamics in Small Confining Systems, Boston, MA, USA, 11/30/92.

Rapid photoluminescence intensity degradation in porous silicon. / Basmaji, P.; Bernussi, A. A.; Rossi, J. C. et al.
Materials Research Society Symposium Proceedings. Publ by Materials Research Society, 1993. p. 233-238 (Materials Research Society Symposium Proceedings; Vol. 283).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Rapid photoluminescence intensity degradation in porous silicon

AU - Basmaji, P.

AU - Bernussi, A. A.

AU - Rossi, J. C.

AU - Matvienko, B.

PY - 1993

Y1 - 1993

N2 - Rapid photoluminescence intensity degradation are observed in porous silicon layers formed at different preparation conditions. The decay rate, ranging from 0.5 to tens of seconds, is found to be a function of illumination intensity, sample temperature and emission wavelength. We attributed the degradation effect to photochemical reactions on the surface.

AB - Rapid photoluminescence intensity degradation are observed in porous silicon layers formed at different preparation conditions. The decay rate, ranging from 0.5 to tens of seconds, is found to be a function of illumination intensity, sample temperature and emission wavelength. We attributed the degradation effect to photochemical reactions on the surface.

UR - http://www.scopus.com/inward/record.url?scp=0027277530&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0027277530

SN - 1558991786

T3 - Materials Research Society Symposium Proceedings

SP - 233

EP - 238

BT - Materials Research Society Symposium Proceedings

PB - Publ by Materials Research Society

T2 - Proceedings of the Second Symposium on Dynamics in Small Confining Systems

Y2 - 30 November 1992 through 4 December 1992

ER -

Rapid photoluminescence intensity degradation in porous silicon

Abstract

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