TY - JOUR
T1 - Rapid Bimolecular and Defect-Assisted Carrier Recombination in Hexagonal Boron Nitride
AU - Chatzakis, Ioannis
AU - Davidson, Roderick B.
AU - Dunkelberger, Adam D.
AU - Liu, Song
AU - Freitas, Jaime
AU - Culbertson, James
AU - Edgar, J. H.
AU - Ratchford, Daniel C.
AU - Ellis, Chase T.
AU - Grafton, Andrea B.
AU - Giles, Alexander J.
AU - Tischler, Joseph G.
AU - Caldwell, Joshua D.
AU - Owrutsky, Jeffrey C.
N1 - Funding Information:
This work was supported by the Office of Naval Research through internal funding at the U.S. Naval Research Laboratory. IC and ABG acknowledge fellowships administered by the American Society for Engineering Education and National Academy of Sciences, respectively. Support for the hBN crystal growth from the Materials Engineering and Processing program of the National Science Foundation, award number CMMI 1538127 is greatly appreciated.
Funding Information:
This work was supported by the Office of Naval Research through internal funding at the U.S. Naval Research Laboratory. IC and ABG acknowledge fellowships administered by the American Society for Engineering Education and National Academy of Sciences, respectively. Support for the hBN crystal growth from the Materials Engineering and Processing program of the National Science Foundation, award number CMMI 1538127, is greatly appreciated.
Publisher Copyright:
© 2019 American Chemical Society.
PY - 2019/6/13
Y1 - 2019/6/13
N2 - Hexagonal boron nitride (hBN) is a wide, indirect bandgap semiconductor that holds great promise for optoelectronic devices in the ultraviolet and mid-infrared spectral regimes. The efficiency of optoelectronic devices is dominated by the dynamic behavior of photogenerated carriers. Here we report on the dynamics of photoexcited free carriers in exfoliated 10B-enriched (99%) hBN at room temperature. Through implementation of ultrafast ultraviolet-pump-infrared-probe transient transmission spectroscopy, we identify two characteristic recombination rates. Initially, at high free carrier density, the pump fluence dependence is bimolecular with a characteristic rate constant of a2.0 × 10-7 cm3/s. This is followed by an exponential recombination of the free carriers at a rate of a2.3 × 109 s-1, which we assign to the influence of the impurities and defects in the lattice. These initial results offer insight into the radiative recombination processes for deep ultraviolet optoelectronic devices and toward realizing active control of mid-IR nanophotonic responses.
AB - Hexagonal boron nitride (hBN) is a wide, indirect bandgap semiconductor that holds great promise for optoelectronic devices in the ultraviolet and mid-infrared spectral regimes. The efficiency of optoelectronic devices is dominated by the dynamic behavior of photogenerated carriers. Here we report on the dynamics of photoexcited free carriers in exfoliated 10B-enriched (99%) hBN at room temperature. Through implementation of ultrafast ultraviolet-pump-infrared-probe transient transmission spectroscopy, we identify two characteristic recombination rates. Initially, at high free carrier density, the pump fluence dependence is bimolecular with a characteristic rate constant of a2.0 × 10-7 cm3/s. This is followed by an exponential recombination of the free carriers at a rate of a2.3 × 109 s-1, which we assign to the influence of the impurities and defects in the lattice. These initial results offer insight into the radiative recombination processes for deep ultraviolet optoelectronic devices and toward realizing active control of mid-IR nanophotonic responses.
UR - http://www.scopus.com/inward/record.url?scp=85067429370&partnerID=8YFLogxK
U2 - 10.1021/acs.jpcc.9b04118
DO - 10.1021/acs.jpcc.9b04118
M3 - Article
AN - SCOPUS:85067429370
SN - 1932-7447
VL - 123
SP - 14689
EP - 14695
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
IS - 23
ER -