Raman studies of nitrogen incorporation in GaAs1-xNx

T. Prokofyeva, T. Sauncy, M. Seon, M. Holtz, Y. Qiu, S. Nikishin, H. Temkin

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We report direct-backscattering Raman studies of GaAs1-xNx alloys, for x≤0.03, grown on (001) GaAs. The Raman spectra exhibit a two-mode behavior. The allowed GaAs-like longitudinal-optic phonon near 292cm-1 is found to red shift at a rate of -136±10cm-1/x. This is well described by the combined effects of strain and alloying. The GaN-like phonon near 470cm-1 is observed to increase in intensity in direct proportion to x, and to systematically blue shift at a rate of 197±10cm-1/x. This blue shift is likewise attributed to strain and alloying. The GaAs-like second-order features are also seen to broaden slightly and diminish in intensity with increasing nitrogen concentration. These results are attributed to a weak breakdown in the zincblende-crystal long-range order, possibly related to the presence of ordered domains within the random alloy.

Original languageEnglish
Pages (from-to)1409-1411
Number of pages3
JournalApplied Physics Letters
Issue number10
StatePublished - 1998


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