Raman scattering study of stoichiometric Si and Ge type II clathrates

G. S. Nolas, C. A. Kendziora, Jan Gryko, Jianjun Dong, Charles W. Myles, Abhijit Poddar, Otto F. Sankey

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Abstract

Raman spectroscopic analysis of polycrystalline and single crystal of stoichiometric Si and Ge type II clathrates was presented. Density functional, plane-wave pseudopotential calculations were used to calculate the vibrational modes of clathrates. The 457.9 and 514.5 nm excitation of an Ar-ion laser, 647.1 nm excitation of a Kr-ion laser, and 700 nm excitation of a Ti-sapphire laser were used in Raman scattering measurements. Lowest frequency Raman-active optic 'rattle' mode, which corresponded to the vibrations of Cs atoms inside the hexakaidecahedra, was identified for Si and Ge clathrate compounds.

Original languageEnglish
Pages (from-to)7225-7230
Number of pages6
JournalJournal of Applied Physics
Volume92
Issue number12
DOIs
StatePublished - Dec 15 2002

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    Nolas, G. S., Kendziora, C. A., Gryko, J., Dong, J., Myles, C. W., Poddar, A., & Sankey, O. F. (2002). Raman scattering study of stoichiometric Si and Ge type II clathrates. Journal of Applied Physics, 92(12), 7225-7230. https://doi.org/10.1063/1.1523146