Quantum well intermixing in GaInNAs/GaAs structures

H. D. Sun, R. Macaluso, S. Calvez, M. D. Dawson, F. Robert, A. C. Bryce, J. H. Marsh, P. Gilet, L. Grenouillet, A. Million, K. B. Nam, J. Y. Lin, H. X. Jiang

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Abstract

The characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content were discussed. 1.3 μM GaInNAs/GaAs multiquantum wells were disordered using rapid thermal annealing and SiO 2 caps deposited on the surface of samples. The dependence of quantum well intermixing-induced photoluminescence blueshift on N concentration was studied. It was found that the blueshift decrease as the nitrogen concentration increases.

Original languageEnglish
Pages (from-to)7581-7585
Number of pages5
JournalJournal of Applied Physics
Volume94
Issue number12
DOIs
StatePublished - Dec 15 2003

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