Abstract
The characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content were discussed. 1.3 μM GaInNAs/GaAs multiquantum wells were disordered using rapid thermal annealing and SiO 2 caps deposited on the surface of samples. The dependence of quantum well intermixing-induced photoluminescence blueshift on N concentration was studied. It was found that the blueshift decrease as the nitrogen concentration increases.
Original language | English |
---|---|
Pages (from-to) | 7581-7585 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 94 |
Issue number | 12 |
DOIs | |
State | Published - Dec 15 2003 |