Quantum shift of band-edge stimulated emission in InGaN-GaN multiple quantum well light-emitting diodes

C. J. Sun; M. Zubair Anwar; Q. Chen; J. W. Yang; M. Asif Khan; M. S. Shur; A. D. Bykhovski; Z. Liliental-Weber; C. Kisielowski; M. Smith; J. Y. Lin; H. X. Xiang

doi:10.1063/1.118762

Quantum shift of band-edge stimulated emission in InGaN-GaN multiple quantum well light-emitting diodes

C. J. Sun, M. Zubair Anwar, Q. Chen, J. W. Yang, M. Asif Khan, M. S. Shur, A. D. Bykhovski, Z. Liliental-Weber, C. Kisielowski, M. Smith, J. Y. Lin, H. X. Xiang

Electrical and Computer Engineering

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89 Scopus citations

Abstract

We report on the band-edge stimulated emission in InGaN-GaN multiple quantum well light-emitting diodes with varying widths and barrier thicknesses of the quantum wells. In these devices, we observe that the stimulated emission peak wavelength shifts to shorter values with decreasing well thickness. From the comparison of the results of the quantum mechanical calculations of the subbands energies with the measured data, we estimate the effective conduction-and valence-band discontinuities at the GaN-In_0.13Ga_0.87N heterointerface to be approximately 130-155 and 245-220 meV, respectively. We also discuss the effect of stress on the estimated values of band discontinuities.

Original language	English
Pages (from-to)	2978-2980
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	22
DOIs	https://doi.org/10.1063/1.118762
State	Published - Jun 2 1997

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title = "Quantum shift of band-edge stimulated emission in InGaN-GaN multiple quantum well light-emitting diodes",

abstract = "We report on the band-edge stimulated emission in InGaN-GaN multiple quantum well light-emitting diodes with varying widths and barrier thicknesses of the quantum wells. In these devices, we observe that the stimulated emission peak wavelength shifts to shorter values with decreasing well thickness. From the comparison of the results of the quantum mechanical calculations of the subbands energies with the measured data, we estimate the effective conduction-and valence-band discontinuities at the GaN-In0.13Ga0.87N heterointerface to be approximately 130-155 and 245-220 meV, respectively. We also discuss the effect of stress on the estimated values of band discontinuities.",

author = "Sun, {C. J.} and {Zubair Anwar}, M. and Q. Chen and Yang, {J. W.} and {Asif Khan}, M. and Shur, {M. S.} and Bykhovski, {A. D.} and Z. Liliental-Weber and C. Kisielowski and M. Smith and Lin, {J. Y.} and Xiang, {H. X.}",

year = "1997",

month = jun,

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doi = "10.1063/1.118762",

language = "English",

volume = "70",

pages = "2978--2980",

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TY - JOUR

T1 - Quantum shift of band-edge stimulated emission in InGaN-GaN multiple quantum well light-emitting diodes

AU - Sun, C. J.

AU - Zubair Anwar, M.

AU - Chen, Q.

AU - Yang, J. W.

AU - Asif Khan, M.

AU - Shur, M. S.

AU - Bykhovski, A. D.

AU - Liliental-Weber, Z.

AU - Kisielowski, C.

AU - Smith, M.

AU - Lin, J. Y.

AU - Xiang, H. X.

PY - 1997/6/2

Y1 - 1997/6/2

N2 - We report on the band-edge stimulated emission in InGaN-GaN multiple quantum well light-emitting diodes with varying widths and barrier thicknesses of the quantum wells. In these devices, we observe that the stimulated emission peak wavelength shifts to shorter values with decreasing well thickness. From the comparison of the results of the quantum mechanical calculations of the subbands energies with the measured data, we estimate the effective conduction-and valence-band discontinuities at the GaN-In0.13Ga0.87N heterointerface to be approximately 130-155 and 245-220 meV, respectively. We also discuss the effect of stress on the estimated values of band discontinuities.

AB - We report on the band-edge stimulated emission in InGaN-GaN multiple quantum well light-emitting diodes with varying widths and barrier thicknesses of the quantum wells. In these devices, we observe that the stimulated emission peak wavelength shifts to shorter values with decreasing well thickness. From the comparison of the results of the quantum mechanical calculations of the subbands energies with the measured data, we estimate the effective conduction-and valence-band discontinuities at the GaN-In0.13Ga0.87N heterointerface to be approximately 130-155 and 245-220 meV, respectively. We also discuss the effect of stress on the estimated values of band discontinuities.

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U2 - 10.1063/1.118762

DO - 10.1063/1.118762

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SP - 2978

EP - 2980

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Quantum shift of band-edge stimulated emission in InGaN-GaN multiple quantum well light-emitting diodes

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