Quantitative assessment of the effects of carrier screening on the average electric field in a GaAs-based p-i-n nanostructure under subpicosecond laser excitation

We have used electric-field-induced Raman scattering to quantitatively assess the effects of carrier screening on the average electric fields in a GaAs-based p-i-n nanostructure semiconductor under subpicosecond laser photoexcitation. Our experimental results demonstrated that the effects of carrier screening on the average electric field were negligible for a photoexcited electron-hole pair density of n≤10¹⁵ cm^-3. As the density of photoexcited carriers increased, we observed a significant decrease of the average electric field. In particular, for n = 10¹⁸ cm^-3, a decrease of electric field of about 50% was found. All of these experimental results were explained by ensemble Monte Carlo simulations and very good agreement has been obtained.