Pulsed power switching of a 4 MM × 4 MM SIC thyristor

Heather O'Brien, William Shaheen, Stephen B. Bayne

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

9 Scopus citations

Abstract

While silicon carbide (SiC) is beginning to make its way into the low voltage (300-1200 V) commercial power diode market, its capabilities in pulse power applications have yet to be proven. A previous investigation by the U.S. Army Research Laboratory (ARL) of SiC GTOs suggested that this emerging technology could provide pulsed current densities 40 to 60 times greater than is obtainable in silicon-based switches [1]. This study continues that earlier work by examining 4 mm times; 4 mm 4H-SiC thyristors designed by CREE Inc. to reah times; kV and 4 kA. These devices were successfully switched up to 3.89 kA with a current density reaching 56.1 kA/cm2, a specific rate-of-current-rise of 49 kA/μs/cm2(for peak rise-time 7.8 kA/μs) and a pulse-width ranging from 2.0 us to 2.6 us. The thyristors were tested at both single shot and repetitive switching rates up to 5 Hz. Device characteristics were mapped on a curve tracer at different stages of testing, and the failure of each thyristor was analyzed.

Original languageEnglish
Title of host publication2005 IEEE Pulsed Power Conference, PPC
Pages896-899
Number of pages4
DOIs
StatePublished - 2007
Event2005 IEEE Pulsed Power Conference, PPC - Monterey, CA, United States
Duration: Jun 13 2005Jun 17 2005

Publication series

NameDigest of Technical Papers-IEEE International Pulsed Power Conference

Conference

Conference2005 IEEE Pulsed Power Conference, PPC
Country/TerritoryUnited States
CityMonterey, CA
Period06/13/0506/17/05

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