Pulsed power switching of 4H-SiC vertical D-MOSFET and device characterization

Argenis Bilbao; William B. Ray; James A. Schrock; Kevin Lawson; Stephen B. Bayne; Lin Cheng; Anant K. Agarwal; Charles Scozzie

doi:10.1109/PPC.2013.6627636

Pulsed power switching of 4H-SiC vertical D-MOSFET and device characterization

Argenis Bilbao, William B. Ray, James A. Schrock, Kevin Lawson, Stephen B. Bayne, Lin Cheng, Anant K. Agarwal, Charles Scozzie

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

The purpose of this research is to characterize and compare CREE's new N-Channel Silicon Carbide (4H-SiC) vertical power D-MOSFET with CREE's previous generation of N-Channel Silicon Carbide (4H-SiC) vertical power D-MOSFET. Changes made to the newest MOSFET design lead to a 400% increase in pulsed current handling capability over the previous generation device with the same active area.

Original language	English
Title of host publication	2013 19th IEEE Pulsed Power Conference, PPC 2013
DOIs	https://doi.org/10.1109/PPC.2013.6627636
State	Published - 2013
Event	2013 19th IEEE Pulsed Power Conference, PPC 2013 - San Francisco, CA, United States Duration: Jun 16 2013 → Jun 21 2013

Publication series

Name	Digest of Technical Papers-IEEE International Pulsed Power Conference

Conference

Conference	2013 19th IEEE Pulsed Power Conference, PPC 2013
Country/Territory	United States
City	San Francisco, CA
Period	06/16/13 → 06/21/13

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10.1109/PPC.2013.6627636

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Bilbao, A., Ray, W. B., Schrock, J. A., Lawson, K., Bayne, S. B., Cheng, L., Agarwal, A. K., & Scozzie, C. (2013). Pulsed power switching of 4H-SiC vertical D-MOSFET and device characterization. In 2013 19th IEEE Pulsed Power Conference, PPC 2013 Article 6627636 (Digest of Technical Papers-IEEE International Pulsed Power Conference). https://doi.org/10.1109/PPC.2013.6627636

@inproceedings{e6f3a6f38dcd4fa482b52edb14f460da,

title = "Pulsed power switching of 4H-SiC vertical D-MOSFET and device characterization",

abstract = "The purpose of this research is to characterize and compare CREE's new N-Channel Silicon Carbide (4H-SiC) vertical power D-MOSFET with CREE's previous generation of N-Channel Silicon Carbide (4H-SiC) vertical power D-MOSFET. Changes made to the newest MOSFET design lead to a 400% increase in pulsed current handling capability over the previous generation device with the same active area.",

author = "Argenis Bilbao and Ray, {William B.} and Schrock, {James A.} and Kevin Lawson and Bayne, {Stephen B.} and Lin Cheng and Agarwal, {Anant K.} and Charles Scozzie",

year = "2013",

doi = "10.1109/PPC.2013.6627636",

language = "English",

isbn = "9781467351676",

series = "Digest of Technical Papers-IEEE International Pulsed Power Conference",

booktitle = "2013 19th IEEE Pulsed Power Conference, PPC 2013",

note = "2013 19th IEEE Pulsed Power Conference, PPC 2013 ; Conference date: 16-06-2013 Through 21-06-2013",

}

Bilbao, A, Ray, WB, Schrock, JA, Lawson, K, Bayne, SB, Cheng, L, Agarwal, AK & Scozzie, C 2013, Pulsed power switching of 4H-SiC vertical D-MOSFET and device characterization. in 2013 19th IEEE Pulsed Power Conference, PPC 2013., 6627636, Digest of Technical Papers-IEEE International Pulsed Power Conference, 2013 19th IEEE Pulsed Power Conference, PPC 2013, San Francisco, CA, United States, 06/16/13. https://doi.org/10.1109/PPC.2013.6627636

Pulsed power switching of 4H-SiC vertical D-MOSFET and device characterization. / Bilbao, Argenis; Ray, William B.; Schrock, James A. et al.
2013 19th IEEE Pulsed Power Conference, PPC 2013. 2013. 6627636 (Digest of Technical Papers-IEEE International Pulsed Power Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Bilbao, Argenis

AU - Ray, William B.

AU - Schrock, James A.

AU - Lawson, Kevin

AU - Bayne, Stephen B.

AU - Cheng, Lin

AU - Agarwal, Anant K.

AU - Scozzie, Charles

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N2 - The purpose of this research is to characterize and compare CREE's new N-Channel Silicon Carbide (4H-SiC) vertical power D-MOSFET with CREE's previous generation of N-Channel Silicon Carbide (4H-SiC) vertical power D-MOSFET. Changes made to the newest MOSFET design lead to a 400% increase in pulsed current handling capability over the previous generation device with the same active area.

AB - The purpose of this research is to characterize and compare CREE's new N-Channel Silicon Carbide (4H-SiC) vertical power D-MOSFET with CREE's previous generation of N-Channel Silicon Carbide (4H-SiC) vertical power D-MOSFET. Changes made to the newest MOSFET design lead to a 400% increase in pulsed current handling capability over the previous generation device with the same active area.

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U2 - 10.1109/PPC.2013.6627636

DO - 10.1109/PPC.2013.6627636

M3 - Conference contribution

AN - SCOPUS:84888593892

SN - 9781467351676

T3 - Digest of Technical Papers-IEEE International Pulsed Power Conference

BT - 2013 19th IEEE Pulsed Power Conference, PPC 2013

T2 - 2013 19th IEEE Pulsed Power Conference, PPC 2013

Y2 - 16 June 2013 through 21 June 2013

ER -

Pulsed power switching of 4H-SiC vertical D-MOSFET and device characterization

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