Pulsed power switching of 4H-SiC vertical D-MOSFET and device characterization

Argenis Bilbao, William B. Ray, James A. Schrock, Kevin Lawson, Stephen B. Bayne, Lin Cheng, Anant K. Agarwal, Charles Scozzie

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

The purpose of this research is to characterize and compare CREE's new N-Channel Silicon Carbide (4H-SiC) vertical power D-MOSFET with CREE's previous generation of N-Channel Silicon Carbide (4H-SiC) vertical power D-MOSFET. Changes made to the newest MOSFET design lead to a 400% increase in pulsed current handling capability over the previous generation device with the same active area.

Original languageEnglish
Title of host publication2013 19th IEEE Pulsed Power Conference, PPC 2013
DOIs
StatePublished - 2013
Event2013 19th IEEE Pulsed Power Conference, PPC 2013 - San Francisco, CA, United States
Duration: Jun 16 2013Jun 21 2013

Publication series

NameDigest of Technical Papers-IEEE International Pulsed Power Conference

Conference

Conference2013 19th IEEE Pulsed Power Conference, PPC 2013
CountryUnited States
CitySan Francisco, CA
Period06/16/1306/21/13

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