@inproceedings{9a618684c97044eb8478c5b0c1520ed7,
title = "Pulsed power evaluation and simulation of high voltage 4H-SiC P-Type SGTOs",
abstract = "Future Army pulsed power applications semiconductor devices that will meet requirements for high-power, low weight and volume, and fast switching speed. The following paper presents the pulsed power evaluation of high voltage silicon carbide (SiC) super gate turn-off (SGTO) thyristors. These devices are well suited for high voltage, high temperature pulsed power and continuous power electronic systems. A pulse-forming network (PFN) circuit and a low inductance, series resistor-capacitor (LRC) circuit were developed to evaluate both the fast dI/dt capability and the pulse safe operating area (SOA) of the SiC SGTO. Transient simulations of the high voltage SiC SGTOs were also performed on a narrow pulse LRC circuit to investigate the device's switching behavior under extreme pulsed conditions.",
keywords = "Gate Turn-off Thyristor, Pulsed power, Silicon carbide, pulse-forming network, safe operating area",
author = "Aderinto Ogunniyi and Heather O'Brien and Miguel Hinojosa and James Schrock and Shelby Lacouture and Emily Hirsch and Stephen Bayne and Ryu, {Sei Hyung}",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; null ; Conference date: 02-08-2016 Through 04-08-2016",
year = "2016",
month = sep,
day = "27",
doi = "10.1109/LEC.2016.7578933",
language = "English",
series = "Proceedings of the 25th Biennial Lester Eastman Conference on High Performance Devices, LEC 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "55--58",
booktitle = "Proceedings of the 25th Biennial Lester Eastman Conference on High Performance Devices, LEC 2016",
}