Pulsed power evaluation and simulation of high voltage 4H-SiC P-Type SGTOs

Aderinto Ogunniyi, Heather O'Brien, Miguel Hinojosa, James Schrock, Shelby Lacouture, Emily Hirsch, Stephen Bayne, Sei Hyung Ryu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Future Army pulsed power applications semiconductor devices that will meet requirements for high-power, low weight and volume, and fast switching speed. The following paper presents the pulsed power evaluation of high voltage silicon carbide (SiC) super gate turn-off (SGTO) thyristors. These devices are well suited for high voltage, high temperature pulsed power and continuous power electronic systems. A pulse-forming network (PFN) circuit and a low inductance, series resistor-capacitor (LRC) circuit were developed to evaluate both the fast dI/dt capability and the pulse safe operating area (SOA) of the SiC SGTO. Transient simulations of the high voltage SiC SGTOs were also performed on a narrow pulse LRC circuit to investigate the device's switching behavior under extreme pulsed conditions.

Original languageEnglish
Title of host publicationProceedings of the 25th Biennial Lester Eastman Conference on High Performance Devices, LEC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages55-58
Number of pages4
ISBN (Electronic)9781467386289
DOIs
StatePublished - Sep 27 2016
Event25th Biennial Lester Eastman Conference on High Performance Devices, LEC 2016 - Bethlehem, United States
Duration: Aug 2 2016Aug 4 2016

Publication series

NameProceedings of the 25th Biennial Lester Eastman Conference on High Performance Devices, LEC 2016

Conference

Conference25th Biennial Lester Eastman Conference on High Performance Devices, LEC 2016
CountryUnited States
CityBethlehem
Period08/2/1608/4/16

Keywords

  • Gate Turn-off Thyristor
  • Pulsed power
  • Silicon carbide
  • pulse-forming network
  • safe operating area

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