Pulsed power evaluation and simulation of high voltage 4H-SiC P-Type SGTOs

Aderinto Ogunniyi; Heather O'Brien; Miguel Hinojosa; James Schrock; Shelby Lacouture; Emily Hirsch; Stephen Bayne; Sei Hyung Ryu

doi:10.1109/LEC.2016.7578933

Pulsed power evaluation and simulation of high voltage 4H-SiC P-Type SGTOs

Aderinto Ogunniyi, Heather O'Brien, Miguel Hinojosa, James Schrock, Shelby Lacouture, Emily Hirsch, Stephen Bayne, Sei Hyung Ryu

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Future Army pulsed power applications semiconductor devices that will meet requirements for high-power, low weight and volume, and fast switching speed. The following paper presents the pulsed power evaluation of high voltage silicon carbide (SiC) super gate turn-off (SGTO) thyristors. These devices are well suited for high voltage, high temperature pulsed power and continuous power electronic systems. A pulse-forming network (PFN) circuit and a low inductance, series resistor-capacitor (LRC) circuit were developed to evaluate both the fast dI/dt capability and the pulse safe operating area (SOA) of the SiC SGTO. Transient simulations of the high voltage SiC SGTOs were also performed on a narrow pulse LRC circuit to investigate the device's switching behavior under extreme pulsed conditions.

Original language	English
Title of host publication	Proceedings of the 25th Biennial Lester Eastman Conference on High Performance Devices, LEC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	55-58
Number of pages	4
ISBN (Electronic)	9781467386289
DOIs	https://doi.org/10.1109/LEC.2016.7578933
State	Published - Sep 27 2016
Event	25th Biennial Lester Eastman Conference on High Performance Devices, LEC 2016 - Bethlehem, United States Duration: Aug 2 2016 → Aug 4 2016

Publication series

Name	Proceedings of the 25th Biennial Lester Eastman Conference on High Performance Devices, LEC 2016

Conference

Conference	25th Biennial Lester Eastman Conference on High Performance Devices, LEC 2016
Country/Territory	United States
City	Bethlehem
Period	08/2/16 → 08/4/16

Keywords

Gate Turn-off Thyristor
Pulsed power
Silicon carbide
pulse-forming network
safe operating area

Access to Document

10.1109/LEC.2016.7578933

Cite this

Ogunniyi, A., O'Brien, H., Hinojosa, M., Schrock, J., Lacouture, S., Hirsch, E., Bayne, S., & Ryu, S. H. (2016). Pulsed power evaluation and simulation of high voltage 4H-SiC P-Type SGTOs. In Proceedings of the 25th Biennial Lester Eastman Conference on High Performance Devices, LEC 2016 (pp. 55-58). [7578933] (Proceedings of the 25th Biennial Lester Eastman Conference on High Performance Devices, LEC 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/LEC.2016.7578933

Ogunniyi, Aderinto ; O'Brien, Heather ; Hinojosa, Miguel ; Schrock, James ; Lacouture, Shelby ; Hirsch, Emily ; Bayne, Stephen ; Ryu, Sei Hyung. / Pulsed power evaluation and simulation of high voltage 4H-SiC P-Type SGTOs. Proceedings of the 25th Biennial Lester Eastman Conference on High Performance Devices, LEC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 55-58 (Proceedings of the 25th Biennial Lester Eastman Conference on High Performance Devices, LEC 2016).

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title = "Pulsed power evaluation and simulation of high voltage 4H-SiC P-Type SGTOs",

abstract = "Future Army pulsed power applications semiconductor devices that will meet requirements for high-power, low weight and volume, and fast switching speed. The following paper presents the pulsed power evaluation of high voltage silicon carbide (SiC) super gate turn-off (SGTO) thyristors. These devices are well suited for high voltage, high temperature pulsed power and continuous power electronic systems. A pulse-forming network (PFN) circuit and a low inductance, series resistor-capacitor (LRC) circuit were developed to evaluate both the fast dI/dt capability and the pulse safe operating area (SOA) of the SiC SGTO. Transient simulations of the high voltage SiC SGTOs were also performed on a narrow pulse LRC circuit to investigate the device's switching behavior under extreme pulsed conditions.",

keywords = "Gate Turn-off Thyristor, Pulsed power, Silicon carbide, pulse-forming network, safe operating area",

author = "Aderinto Ogunniyi and Heather O'Brien and Miguel Hinojosa and James Schrock and Shelby Lacouture and Emily Hirsch and Stephen Bayne and Ryu, {Sei Hyung}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; null ; Conference date: 02-08-2016 Through 04-08-2016",

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doi = "10.1109/LEC.2016.7578933",

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Ogunniyi, A, O'Brien, H, Hinojosa, M, Schrock, J, Lacouture, S, Hirsch, E, Bayne, S & Ryu, SH 2016, Pulsed power evaluation and simulation of high voltage 4H-SiC P-Type SGTOs. in Proceedings of the 25th Biennial Lester Eastman Conference on High Performance Devices, LEC 2016., 7578933, Proceedings of the 25th Biennial Lester Eastman Conference on High Performance Devices, LEC 2016, Institute of Electrical and Electronics Engineers Inc., pp. 55-58, 25th Biennial Lester Eastman Conference on High Performance Devices, LEC 2016, Bethlehem, United States, 08/2/16. https://doi.org/10.1109/LEC.2016.7578933

Pulsed power evaluation and simulation of high voltage 4H-SiC P-Type SGTOs. / Ogunniyi, Aderinto; O'Brien, Heather; Hinojosa, Miguel; Schrock, James; Lacouture, Shelby; Hirsch, Emily; Bayne, Stephen; Ryu, Sei Hyung.

Proceedings of the 25th Biennial Lester Eastman Conference on High Performance Devices, LEC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 55-58 7578933 (Proceedings of the 25th Biennial Lester Eastman Conference on High Performance Devices, LEC 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Ogunniyi, Aderinto

AU - O'Brien, Heather

AU - Hinojosa, Miguel

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AU - Lacouture, Shelby

AU - Hirsch, Emily

AU - Bayne, Stephen

AU - Ryu, Sei Hyung

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N2 - Future Army pulsed power applications semiconductor devices that will meet requirements for high-power, low weight and volume, and fast switching speed. The following paper presents the pulsed power evaluation of high voltage silicon carbide (SiC) super gate turn-off (SGTO) thyristors. These devices are well suited for high voltage, high temperature pulsed power and continuous power electronic systems. A pulse-forming network (PFN) circuit and a low inductance, series resistor-capacitor (LRC) circuit were developed to evaluate both the fast dI/dt capability and the pulse safe operating area (SOA) of the SiC SGTO. Transient simulations of the high voltage SiC SGTOs were also performed on a narrow pulse LRC circuit to investigate the device's switching behavior under extreme pulsed conditions.

AB - Future Army pulsed power applications semiconductor devices that will meet requirements for high-power, low weight and volume, and fast switching speed. The following paper presents the pulsed power evaluation of high voltage silicon carbide (SiC) super gate turn-off (SGTO) thyristors. These devices are well suited for high voltage, high temperature pulsed power and continuous power electronic systems. A pulse-forming network (PFN) circuit and a low inductance, series resistor-capacitor (LRC) circuit were developed to evaluate both the fast dI/dt capability and the pulse safe operating area (SOA) of the SiC SGTO. Transient simulations of the high voltage SiC SGTOs were also performed on a narrow pulse LRC circuit to investigate the device's switching behavior under extreme pulsed conditions.

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Ogunniyi A, O'Brien H, Hinojosa M, Schrock J, Lacouture S, Hirsch E et al. Pulsed power evaluation and simulation of high voltage 4H-SiC P-Type SGTOs. In Proceedings of the 25th Biennial Lester Eastman Conference on High Performance Devices, LEC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 55-58. 7578933. (Proceedings of the 25th Biennial Lester Eastman Conference on High Performance Devices, LEC 2016). https://doi.org/10.1109/LEC.2016.7578933

Pulsed power evaluation and simulation of high voltage 4H-SiC P-Type SGTOs

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Keywords

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