TY - GEN
T1 - Pulsed power evaluation and simulation of high voltage 4H-SiC P-Type SGTOs
AU - Ogunniyi, Aderinto
AU - O'Brien, Heather
AU - Hinojosa, Miguel
AU - Schrock, James
AU - Lacouture, Shelby
AU - Hirsch, Emily
AU - Bayne, Stephen
AU - Ryu, Sei Hyung
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/9/27
Y1 - 2016/9/27
N2 - Future Army pulsed power applications semiconductor devices that will meet requirements for high-power, low weight and volume, and fast switching speed. The following paper presents the pulsed power evaluation of high voltage silicon carbide (SiC) super gate turn-off (SGTO) thyristors. These devices are well suited for high voltage, high temperature pulsed power and continuous power electronic systems. A pulse-forming network (PFN) circuit and a low inductance, series resistor-capacitor (LRC) circuit were developed to evaluate both the fast dI/dt capability and the pulse safe operating area (SOA) of the SiC SGTO. Transient simulations of the high voltage SiC SGTOs were also performed on a narrow pulse LRC circuit to investigate the device's switching behavior under extreme pulsed conditions.
AB - Future Army pulsed power applications semiconductor devices that will meet requirements for high-power, low weight and volume, and fast switching speed. The following paper presents the pulsed power evaluation of high voltage silicon carbide (SiC) super gate turn-off (SGTO) thyristors. These devices are well suited for high voltage, high temperature pulsed power and continuous power electronic systems. A pulse-forming network (PFN) circuit and a low inductance, series resistor-capacitor (LRC) circuit were developed to evaluate both the fast dI/dt capability and the pulse safe operating area (SOA) of the SiC SGTO. Transient simulations of the high voltage SiC SGTOs were also performed on a narrow pulse LRC circuit to investigate the device's switching behavior under extreme pulsed conditions.
KW - Gate Turn-off Thyristor
KW - Pulsed power
KW - Silicon carbide
KW - pulse-forming network
KW - safe operating area
UR - http://www.scopus.com/inward/record.url?scp=84994618735&partnerID=8YFLogxK
U2 - 10.1109/LEC.2016.7578933
DO - 10.1109/LEC.2016.7578933
M3 - Conference contribution
AN - SCOPUS:84994618735
T3 - Proceedings of the 25th Biennial Lester Eastman Conference on High Performance Devices, LEC 2016
SP - 55
EP - 58
BT - Proceedings of the 25th Biennial Lester Eastman Conference on High Performance Devices, LEC 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 25th Biennial Lester Eastman Conference on High Performance Devices, LEC 2016
Y2 - 2 August 2016 through 4 August 2016
ER -