The U. S. Army Research Laboratory (ARL) is evaluating silicon carbide switches and diodes to determine the range of high power and pulsed power applications for which SiC is a sensible material to use. This study focused on 6 kV, SiC P-i-N diodes which were designed by Cree Inc. and packaged and pulse tested at ARL. Diodes were pulsed at a single shot rate both individually and in parallel. Individual diodes were pulsed as high as 5.9 kA (corresponding to an action of 4.5×103 A2s) for 25 single shots before failing, and as high as 5.0 kA (with an action of 3.5×103 A2s) for over 100 shots without failure. Five diodes paralleled in the pulse testbed carried a total current of 23 kA with each diode sharing 19-21% of the total peak current. Eight diodes in parallel reached over 39 kA peak current. The ultimate goal is to combine 8-10 diodes in a single, compact package for higher current applications.