Pulse evaluation of high voltage SIC diodes

H. O'brien; W. Shaheen; S. B. Bayne; Brett A. Hull; A. K. Agarwal

doi:10.1109/PPPS.2007.4652365

Pulse evaluation of high voltage SIC diodes

H. O'brien, W. Shaheen, S. B. Bayne, Brett A. Hull, A. K. Agarwal

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The U. S. Army Research Laboratory (ARL) is evaluating silicon carbide switches and diodes to determine the range of high power and pulsed power applications for which SiC is a sensible material to use. This study focused on 6 kV, SiC P-i-N diodes which were designed by Cree Inc. and packaged and pulse tested at ARL. Diodes were pulsed at a single shot rate both individually and in parallel. Individual diodes were pulsed as high as 5.9 kA (corresponding to an action of 4.5×10³ A²s) for 25 single shots before failing, and as high as 5.0 kA (with an action of 3.5×10³ A²s) for over 100 shots without failure. Five diodes paralleled in the pulse testbed carried a total current of 23 kA with each diode sharing 19-21% of the total peak current. Eight diodes in parallel reached over 39 kA peak current. The ultimate goal is to combine 8-10 diodes in a single, compact package for higher current applications.

Original language	English
Title of host publication	PPPS-2007
Subtitle of host publication	Pulsed Power and Plasma Science 2007, The 16th IEEE International Pulsed Power Conference and The 34th IEEE International Conference on Plasma Science
Pages	1029-1033
Number of pages	5
DOIs	https://doi.org/10.1109/PPPS.2007.4652365
State	Published - 2007
Event	PPPS-2007: Pulsed Power and Plasma Science 2007, The 16th IEEE International Pulsed Power Conference and The 34th IEEE International Conference on Plasma Science - Albuquerque, NM, United States Duration: Jun 17 2007 → Jun 22 2007

Publication series

Name	PPPS-2007 - Pulsed Power Plasma Science 2007
Volume	2

Conference

Conference	PPPS-2007: Pulsed Power and Plasma Science 2007, The 16th IEEE International Pulsed Power Conference and The 34th IEEE International Conference on Plasma Science
Country/Territory	United States
City	Albuquerque, NM
Period	06/17/07 → 06/22/07

Access to Document

10.1109/PPPS.2007.4652365

Cite this

O'brien, H., Shaheen, W., Bayne, S. B., Hull, B. A., & Agarwal, A. K. (2007). Pulse evaluation of high voltage SIC diodes. In PPPS-2007: Pulsed Power and Plasma Science 2007, The 16th IEEE International Pulsed Power Conference and The 34th IEEE International Conference on Plasma Science (pp. 1029-1033). [4652365] (PPPS-2007 - Pulsed Power Plasma Science 2007; Vol. 2). https://doi.org/10.1109/PPPS.2007.4652365

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title = "Pulse evaluation of high voltage SIC diodes",

abstract = "The U. S. Army Research Laboratory (ARL) is evaluating silicon carbide switches and diodes to determine the range of high power and pulsed power applications for which SiC is a sensible material to use. This study focused on 6 kV, SiC P-i-N diodes which were designed by Cree Inc. and packaged and pulse tested at ARL. Diodes were pulsed at a single shot rate both individually and in parallel. Individual diodes were pulsed as high as 5.9 kA (corresponding to an action of 4.5×103 A2s) for 25 single shots before failing, and as high as 5.0 kA (with an action of 3.5×103 A2s) for over 100 shots without failure. Five diodes paralleled in the pulse testbed carried a total current of 23 kA with each diode sharing 19-21% of the total peak current. Eight diodes in parallel reached over 39 kA peak current. The ultimate goal is to combine 8-10 diodes in a single, compact package for higher current applications.",

author = "H. O'brien and W. Shaheen and Bayne, {S. B.} and Hull, {Brett A.} and Agarwal, {A. K.}",

year = "2007",

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language = "English",

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O'brien, H, Shaheen, W, Bayne, SB, Hull, BA & Agarwal, AK 2007, Pulse evaluation of high voltage SIC diodes. in PPPS-2007: Pulsed Power and Plasma Science 2007, The 16th IEEE International Pulsed Power Conference and The 34th IEEE International Conference on Plasma Science., 4652365, PPPS-2007 - Pulsed Power Plasma Science 2007, vol. 2, pp. 1029-1033, PPPS-2007: Pulsed Power and Plasma Science 2007, The 16th IEEE International Pulsed Power Conference and The 34th IEEE International Conference on Plasma Science, Albuquerque, NM, United States, 06/17/07. https://doi.org/10.1109/PPPS.2007.4652365

Pulse evaluation of high voltage SIC diodes. / O'brien, H.; Shaheen, W.; Bayne, S. B.; Hull, Brett A.; Agarwal, A. K.

PPPS-2007: Pulsed Power and Plasma Science 2007, The 16th IEEE International Pulsed Power Conference and The 34th IEEE International Conference on Plasma Science. 2007. p. 1029-1033 4652365 (PPPS-2007 - Pulsed Power Plasma Science 2007; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - The U. S. Army Research Laboratory (ARL) is evaluating silicon carbide switches and diodes to determine the range of high power and pulsed power applications for which SiC is a sensible material to use. This study focused on 6 kV, SiC P-i-N diodes which were designed by Cree Inc. and packaged and pulse tested at ARL. Diodes were pulsed at a single shot rate both individually and in parallel. Individual diodes were pulsed as high as 5.9 kA (corresponding to an action of 4.5×103 A2s) for 25 single shots before failing, and as high as 5.0 kA (with an action of 3.5×103 A2s) for over 100 shots without failure. Five diodes paralleled in the pulse testbed carried a total current of 23 kA with each diode sharing 19-21% of the total peak current. Eight diodes in parallel reached over 39 kA peak current. The ultimate goal is to combine 8-10 diodes in a single, compact package for higher current applications.

AB - The U. S. Army Research Laboratory (ARL) is evaluating silicon carbide switches and diodes to determine the range of high power and pulsed power applications for which SiC is a sensible material to use. This study focused on 6 kV, SiC P-i-N diodes which were designed by Cree Inc. and packaged and pulse tested at ARL. Diodes were pulsed at a single shot rate both individually and in parallel. Individual diodes were pulsed as high as 5.9 kA (corresponding to an action of 4.5×103 A2s) for 25 single shots before failing, and as high as 5.0 kA (with an action of 3.5×103 A2s) for over 100 shots without failure. Five diodes paralleled in the pulse testbed carried a total current of 23 kA with each diode sharing 19-21% of the total peak current. Eight diodes in parallel reached over 39 kA peak current. The ultimate goal is to combine 8-10 diodes in a single, compact package for higher current applications.

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O'brien H, Shaheen W, Bayne SB, Hull BA, Agarwal AK. Pulse evaluation of high voltage SIC diodes. In PPPS-2007: Pulsed Power and Plasma Science 2007, The 16th IEEE International Pulsed Power Conference and The 34th IEEE International Conference on Plasma Science. 2007. p. 1029-1033. 4652365. (PPPS-2007 - Pulsed Power Plasma Science 2007). https://doi.org/10.1109/PPPS.2007.4652365

Pulse evaluation of high voltage SIC diodes

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