Properties of InGaN/GaN MQW LEDs grown by MOCVD with and without hydrogen carrier gas

Huseyin Ekinci, Vladimir V. Kuryatkov, Chris Forgey, Amir Dabiran, Robert Jorgenson, Sergey A. Nikishin

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Two types of 3-period In14Ga86N/GaN multiple quantum well light-emitting diodes (LEDs) were studied, differing only in the conditions under which their p-GaN layers were grown by metalorganic chemical vapor deposition. The p-GaN of one type of LED was grown with a carrier gas mixture of N2/H2. A carrier gas of only N2 was used to grow the p-GaN of the second type of LED at a relatively elevated temperature, making the entire structure grown in pure N2 alone. Subsequently the growth, fabrication and characterization of each type of LED were methodologically studied. Based on the XRD analysis, the thickness of the well, barrier and In composition of the LED structures were estimated to be 2.5 nm, 8.5 nm and x = 14%, respectively. Finally, the electroluminescence output of these devices was evaluated at a current of 20 mA at room temperature. It was observed that the LED structure grown with nitrogen-only carrier gas had approximately 25% superior electroluminescence.

Original languageEnglish
Pages (from-to)168-172
Number of pages5
JournalVacuum
Volume148
DOIs
StatePublished - Feb 2018

Keywords

  • Hydrogen-free epitaxy
  • InGaN
  • InGaN/GaN multiple quantum wells (MQW)
  • LED
  • Metalorganic chemical vapor deposition (MOCVD)
  • p-GaN

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