TY - JOUR
T1 - Properties of InGaN/GaN MQW LEDs grown by MOCVD with and without hydrogen carrier gas
AU - Ekinci, Huseyin
AU - Kuryatkov, Vladimir V.
AU - Forgey, Chris
AU - Dabiran, Amir
AU - Jorgenson, Robert
AU - Nikishin, Sergey A.
N1 - Publisher Copyright:
© 2017 Elsevier Ltd
PY - 2018/2
Y1 - 2018/2
N2 - Two types of 3-period In14Ga86N/GaN multiple quantum well light-emitting diodes (LEDs) were studied, differing only in the conditions under which their p-GaN layers were grown by metalorganic chemical vapor deposition. The p-GaN of one type of LED was grown with a carrier gas mixture of N2/H2. A carrier gas of only N2 was used to grow the p-GaN of the second type of LED at a relatively elevated temperature, making the entire structure grown in pure N2 alone. Subsequently the growth, fabrication and characterization of each type of LED were methodologically studied. Based on the XRD analysis, the thickness of the well, barrier and In composition of the LED structures were estimated to be 2.5 nm, 8.5 nm and x = 14%, respectively. Finally, the electroluminescence output of these devices was evaluated at a current of 20 mA at room temperature. It was observed that the LED structure grown with nitrogen-only carrier gas had approximately 25% superior electroluminescence.
AB - Two types of 3-period In14Ga86N/GaN multiple quantum well light-emitting diodes (LEDs) were studied, differing only in the conditions under which their p-GaN layers were grown by metalorganic chemical vapor deposition. The p-GaN of one type of LED was grown with a carrier gas mixture of N2/H2. A carrier gas of only N2 was used to grow the p-GaN of the second type of LED at a relatively elevated temperature, making the entire structure grown in pure N2 alone. Subsequently the growth, fabrication and characterization of each type of LED were methodologically studied. Based on the XRD analysis, the thickness of the well, barrier and In composition of the LED structures were estimated to be 2.5 nm, 8.5 nm and x = 14%, respectively. Finally, the electroluminescence output of these devices was evaluated at a current of 20 mA at room temperature. It was observed that the LED structure grown with nitrogen-only carrier gas had approximately 25% superior electroluminescence.
KW - Hydrogen-free epitaxy
KW - InGaN
KW - InGaN/GaN multiple quantum wells (MQW)
KW - LED
KW - Metalorganic chemical vapor deposition (MOCVD)
KW - p-GaN
UR - http://www.scopus.com/inward/record.url?scp=85034428527&partnerID=8YFLogxK
U2 - 10.1016/j.vacuum.2017.11.014
DO - 10.1016/j.vacuum.2017.11.014
M3 - Article
AN - SCOPUS:85034428527
SN - 0042-207X
VL - 148
SP - 168
EP - 172
JO - Vacuum
JF - Vacuum
ER -