Abstract
A study involving the implantation of metalorganic chemical vapor deposited AlN layers on the Al2O3 substrate was investigated. The implantation process significantly reduced the band-edge photoluminescence. The 950 °C annealed sample showed good crystal quality when obeserved by x-ray diffraction technique, while there was an absence of the ferromagnetic second phases.
Original language | English |
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Pages (from-to) | 1592-1596 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 94 |
Issue number | 3 |
DOIs | |
State | Published - Aug 1 2003 |