Properties of Co-, Cr-, or Mn-implanted AlN

R. M. Frazier, J. Stapleton, G. T. Thaler, C. R. Abernathy, S. J. Pearton, R. Rairigh, J. Kelly, A. F. Hebard, M. L. Nakarmi, K. B. Nam, J. Y. Lin, H. X. Jiang, J. M. Zavada, R. G. Wilson

Research output: Contribution to journalArticlepeer-review

54 Scopus citations

Abstract

A study involving the implantation of metalorganic chemical vapor deposited AlN layers on the Al2O3 substrate was investigated. The implantation process significantly reduced the band-edge photoluminescence. The 950 °C annealed sample showed good crystal quality when obeserved by x-ray diffraction technique, while there was an absence of the ferromagnetic second phases.

Original languageEnglish
Pages (from-to)1592-1596
Number of pages5
JournalJournal of Applied Physics
Volume94
Issue number3
DOIs
StatePublished - Aug 1 2003

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