Probing the relationship between structural and optical properties of Si-doped AlN

B. N. Pantha; A. Sedhain; J. Li; J. Y. Lin; H. X. Jiang

doi:10.1063/1.3374444

Probing the relationship between structural and optical properties of Si-doped AlN

B. N. Pantha, A. Sedhain, J. Li, J. Y. Lin, H. X. Jiang

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Abstract

Much efforts have been devoted to achieve conductivity control in the ultrahigh band gap (∼6.1 eV) AlN by Si doping. The effects of Si-doping on the structural and optical properties of AlN epilayers have been investigated. X-ray diffraction studies revealed that accumulation of tensile stress in Si-doped AlN is a reason for the formation of additional edge dislocations. Photoluminescence (PL) studies revealed that the linewidths of both band-edge and impurity related transitions are directly correlated with the density of screw dislocations, Nscrew, which increases with the Si doping concentration (NSi). Furthermore, it was formulated that the band-edge (impurity) PL emission linewidth increases linearly with increasing Nscrew at a rate of ∼3.3±0.7 meV/ 10⁸ cm^-2 (26.5±4 meV/ 10⁸ cm^-2), thereby establishing PL measurement as a simple and effective method to estimate screw dislocation density in AlN epilayers.

Original language	English
Article number	131906
Journal	Applied Physics Letters
Volume	96
Issue number	13
DOIs	https://doi.org/10.1063/1.3374444
State	Published - 2010

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title = "Probing the relationship between structural and optical properties of Si-doped AlN",

abstract = "Much efforts have been devoted to achieve conductivity control in the ultrahigh band gap (∼6.1 eV) AlN by Si doping. The effects of Si-doping on the structural and optical properties of AlN epilayers have been investigated. X-ray diffraction studies revealed that accumulation of tensile stress in Si-doped AlN is a reason for the formation of additional edge dislocations. Photoluminescence (PL) studies revealed that the linewidths of both band-edge and impurity related transitions are directly correlated with the density of screw dislocations, Nscrew, which increases with the Si doping concentration (NSi). Furthermore, it was formulated that the band-edge (impurity) PL emission linewidth increases linearly with increasing Nscrew at a rate of ∼3.3±0.7 meV/ 108 cm-2 (26.5±4 meV/ 108 cm-2), thereby establishing PL measurement as a simple and effective method to estimate screw dislocation density in AlN epilayers.",

author = "Pantha, {B. N.} and A. Sedhain and J. Li and Lin, {J. Y.} and Jiang, {H. X.}",

note = "Funding Information: The efforts on AlN epigrowth and optical studies are supported by DOE (Grant No. FG02-09ER46552) and the structural characterization of AlN effort is supported by ARO (Grant No. W911NF0810375). H.X.J. and J.Y.L. would like to acknowledge the support of Whitacre endowed chair positions through the AT&T foundation.",

year = "2010",

doi = "10.1063/1.3374444",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

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AU - Pantha, B. N.

AU - Sedhain, A.

AU - Li, J.

AU - Lin, J. Y.

AU - Jiang, H. X.

N1 - Funding Information: The efforts on AlN epigrowth and optical studies are supported by DOE (Grant No. FG02-09ER46552) and the structural characterization of AlN effort is supported by ARO (Grant No. W911NF0810375). H.X.J. and J.Y.L. would like to acknowledge the support of Whitacre endowed chair positions through the AT&T foundation.

PY - 2010

Y1 - 2010

N2 - Much efforts have been devoted to achieve conductivity control in the ultrahigh band gap (∼6.1 eV) AlN by Si doping. The effects of Si-doping on the structural and optical properties of AlN epilayers have been investigated. X-ray diffraction studies revealed that accumulation of tensile stress in Si-doped AlN is a reason for the formation of additional edge dislocations. Photoluminescence (PL) studies revealed that the linewidths of both band-edge and impurity related transitions are directly correlated with the density of screw dislocations, Nscrew, which increases with the Si doping concentration (NSi). Furthermore, it was formulated that the band-edge (impurity) PL emission linewidth increases linearly with increasing Nscrew at a rate of ∼3.3±0.7 meV/ 108 cm-2 (26.5±4 meV/ 108 cm-2), thereby establishing PL measurement as a simple and effective method to estimate screw dislocation density in AlN epilayers.

AB - Much efforts have been devoted to achieve conductivity control in the ultrahigh band gap (∼6.1 eV) AlN by Si doping. The effects of Si-doping on the structural and optical properties of AlN epilayers have been investigated. X-ray diffraction studies revealed that accumulation of tensile stress in Si-doped AlN is a reason for the formation of additional edge dislocations. Photoluminescence (PL) studies revealed that the linewidths of both band-edge and impurity related transitions are directly correlated with the density of screw dislocations, Nscrew, which increases with the Si doping concentration (NSi). Furthermore, it was formulated that the band-edge (impurity) PL emission linewidth increases linearly with increasing Nscrew at a rate of ∼3.3±0.7 meV/ 108 cm-2 (26.5±4 meV/ 108 cm-2), thereby establishing PL measurement as a simple and effective method to estimate screw dislocation density in AlN epilayers.

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Probing the relationship between structural and optical properties of Si-doped AlN

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