Probing exciton-phonon interaction in AlN epilayers by photoluminescence

A. Sedhain; J. Li; J. Y. Lin; H. X. Jiang

doi:10.1063/1.3206672

Probing exciton-phonon interaction in AlN epilayers by photoluminescence

A. Sedhain, J. Li, J. Y. Lin, H. X. Jiang

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Abstract

Deep ultraviolet (DUV) photoluminescence (PL) spectroscopy has been employed to investigate the exciton-phonon interaction in AlN. Longitudinal optical (LO) phonon replicas of free exciton recombination lines were observed in PL emission spectra, revealing the coupling of excitons with LO phonons. We have quantified such interaction by measuring Huang-Rhys factor based on polarization resolved DUV PL measurements. It was observed that the exciton-phonon coupling strength in AlN depends on the polarization configuration and is much larger in the direction with the electrical field (E→) of the emitted light perpendicular to the wurtzite c -axis (E→ ⊥ c→) than in the direction of E→ ∥ c→. Furthermore, a larger coupling constant was also measured in AlN than in GaN. The large effective hole to electron mass ratio in AlN, especially in the E→ ⊥ c→ configuration, mainly accounts for the observed results.

Original language	English
Article number	061106
Journal	Applied Physics Letters
Volume	95
Issue number	6
DOIs	https://doi.org/10.1063/1.3206672
State	Published - 2009

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@article{54a873f8237843d489a7c3bc8826e511,

title = "Probing exciton-phonon interaction in AlN epilayers by photoluminescence",

abstract = "Deep ultraviolet (DUV) photoluminescence (PL) spectroscopy has been employed to investigate the exciton-phonon interaction in AlN. Longitudinal optical (LO) phonon replicas of free exciton recombination lines were observed in PL emission spectra, revealing the coupling of excitons with LO phonons. We have quantified such interaction by measuring Huang-Rhys factor based on polarization resolved DUV PL measurements. It was observed that the exciton-phonon coupling strength in AlN depends on the polarization configuration and is much larger in the direction with the electrical field (E→) of the emitted light perpendicular to the wurtzite c -axis (E→ ⊥ c→) than in the direction of E→ ∥ c→. Furthermore, a larger coupling constant was also measured in AlN than in GaN. The large effective hole to electron mass ratio in AlN, especially in the E→ ⊥ c→ configuration, mainly accounts for the observed results.",

author = "A. Sedhain and J. Li and Lin, {J. Y.} and Jiang, {H. X.}",

note = "Funding Information: This research is supported by DOE (Grant No. DE-FG02-09ER46552). J.Y.L. and H.X.J. gratefully acknowledge the support of the Linda Whitacre and Edward Whitacre endowed chair positions through the AT & T Foundation.",

year = "2009",

doi = "10.1063/1.3206672",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AIP Publishing",

number = "6",

}

TY - JOUR

T1 - Probing exciton-phonon interaction in AlN epilayers by photoluminescence

AU - Sedhain, A.

AU - Li, J.

AU - Lin, J. Y.

AU - Jiang, H. X.

N1 - Funding Information: This research is supported by DOE (Grant No. DE-FG02-09ER46552). J.Y.L. and H.X.J. gratefully acknowledge the support of the Linda Whitacre and Edward Whitacre endowed chair positions through the AT & T Foundation.

PY - 2009

Y1 - 2009

N2 - Deep ultraviolet (DUV) photoluminescence (PL) spectroscopy has been employed to investigate the exciton-phonon interaction in AlN. Longitudinal optical (LO) phonon replicas of free exciton recombination lines were observed in PL emission spectra, revealing the coupling of excitons with LO phonons. We have quantified such interaction by measuring Huang-Rhys factor based on polarization resolved DUV PL measurements. It was observed that the exciton-phonon coupling strength in AlN depends on the polarization configuration and is much larger in the direction with the electrical field (E→) of the emitted light perpendicular to the wurtzite c -axis (E→ ⊥ c→) than in the direction of E→ ∥ c→. Furthermore, a larger coupling constant was also measured in AlN than in GaN. The large effective hole to electron mass ratio in AlN, especially in the E→ ⊥ c→ configuration, mainly accounts for the observed results.

AB - Deep ultraviolet (DUV) photoluminescence (PL) spectroscopy has been employed to investigate the exciton-phonon interaction in AlN. Longitudinal optical (LO) phonon replicas of free exciton recombination lines were observed in PL emission spectra, revealing the coupling of excitons with LO phonons. We have quantified such interaction by measuring Huang-Rhys factor based on polarization resolved DUV PL measurements. It was observed that the exciton-phonon coupling strength in AlN depends on the polarization configuration and is much larger in the direction with the electrical field (E→) of the emitted light perpendicular to the wurtzite c -axis (E→ ⊥ c→) than in the direction of E→ ∥ c→. Furthermore, a larger coupling constant was also measured in AlN than in GaN. The large effective hole to electron mass ratio in AlN, especially in the E→ ⊥ c→ configuration, mainly accounts for the observed results.

UR - http://www.scopus.com/inward/record.url?scp=69049102119&partnerID=8YFLogxK

U2 - 10.1063/1.3206672

DO - 10.1063/1.3206672

M3 - Article

AN - SCOPUS:69049102119

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 061106

ER -

Probing exciton-phonon interaction in AlN epilayers by photoluminescence

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