Abstract
In situ electrical resistivity measurement of powdered Mg 2Si has been performed in a diamond anvil cell up to 25.4 GPa. At about 22.2 GPa, Mg 2Si underwent a pressure-induced semiconductor-metal phase transition that took place in the Ni 2In-type structure rather than the anti-fluorite structure predicted theoretically. The other phases (anti-fluorite and anti-cotunnite) belong to the semiconductor phase.
Original language | English |
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Pages (from-to) | 440-442 |
Number of pages | 3 |
Journal | Solid State Communications |
Volume | 152 |
Issue number | 5 |
DOIs | |
State | Published - Mar 2012 |
Keywords
- A. Semiconductors
- D. Phase transitions
- E. High pressure