Pressure-induced semiconductor-metal phase transition in Mg 2Si

Wanbin Ren; Yonghao Han; Cailong Liu; Ningning Su; Yan Li; Boheng Ma; Yanzhang Ma; Chunxiao Gao

doi:10.1016/j.ssc.2011.11.043

Pressure-induced semiconductor-metal phase transition in Mg ₂Si

Wanbin Ren, Yonghao Han, Cailong Liu, Ningning Su, Yan Li, Boheng Ma, Yanzhang Ma, Chunxiao Gao

Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

In situ electrical resistivity measurement of powdered Mg ₂Si has been performed in a diamond anvil cell up to 25.4 GPa. At about 22.2 GPa, Mg ₂Si underwent a pressure-induced semiconductor-metal phase transition that took place in the Ni ₂In-type structure rather than the anti-fluorite structure predicted theoretically. The other phases (anti-fluorite and anti-cotunnite) belong to the semiconductor phase.

Original language	English
Pages (from-to)	440-442
Number of pages	3
Journal	Solid State Communications
Volume	152
Issue number	5
DOIs	https://doi.org/10.1016/j.ssc.2011.11.043
State	Published - Mar 2012

Keywords

A. Semiconductors
D. Phase transitions
E. High pressure

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10.1016/j.ssc.2011.11.043

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@article{e1bd387ce8b5481da968c593323e3778,

title = "Pressure-induced semiconductor-metal phase transition in Mg 2Si",

abstract = "In situ electrical resistivity measurement of powdered Mg 2Si has been performed in a diamond anvil cell up to 25.4 GPa. At about 22.2 GPa, Mg 2Si underwent a pressure-induced semiconductor-metal phase transition that took place in the Ni 2In-type structure rather than the anti-fluorite structure predicted theoretically. The other phases (anti-fluorite and anti-cotunnite) belong to the semiconductor phase.",

keywords = "A. Semiconductors, D. Phase transitions, E. High pressure",

author = "Wanbin Ren and Yonghao Han and Cailong Liu and Ningning Su and Yan Li and Boheng Ma and Yanzhang Ma and Chunxiao Gao",

note = "Funding Information: This work was supported by the National Natural Science Foundation of China (Grant Nos 10874053 , 11074094 , 50802033 , and 91014004 ) and by the National Basic Research Program of China (Grant No. 2011CB808204 ).",

year = "2012",

month = mar,

doi = "10.1016/j.ssc.2011.11.043",

language = "English",

volume = "152",

pages = "440--442",

journal = "Solid State Communications",

issn = "0038-1098",

number = "5",

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TY - JOUR

T1 - Pressure-induced semiconductor-metal phase transition in Mg 2Si

AU - Ren, Wanbin

AU - Han, Yonghao

AU - Liu, Cailong

AU - Su, Ningning

AU - Li, Yan

AU - Ma, Boheng

AU - Ma, Yanzhang

AU - Gao, Chunxiao

N1 - Funding Information: This work was supported by the National Natural Science Foundation of China (Grant Nos 10874053 , 11074094 , 50802033 , and 91014004 ) and by the National Basic Research Program of China (Grant No. 2011CB808204 ).

PY - 2012/3

Y1 - 2012/3

N2 - In situ electrical resistivity measurement of powdered Mg 2Si has been performed in a diamond anvil cell up to 25.4 GPa. At about 22.2 GPa, Mg 2Si underwent a pressure-induced semiconductor-metal phase transition that took place in the Ni 2In-type structure rather than the anti-fluorite structure predicted theoretically. The other phases (anti-fluorite and anti-cotunnite) belong to the semiconductor phase.

AB - In situ electrical resistivity measurement of powdered Mg 2Si has been performed in a diamond anvil cell up to 25.4 GPa. At about 22.2 GPa, Mg 2Si underwent a pressure-induced semiconductor-metal phase transition that took place in the Ni 2In-type structure rather than the anti-fluorite structure predicted theoretically. The other phases (anti-fluorite and anti-cotunnite) belong to the semiconductor phase.

KW - A. Semiconductors

KW - D. Phase transitions

KW - E. High pressure

UR - http://www.scopus.com/inward/record.url?scp=84856338004&partnerID=8YFLogxK

U2 - 10.1016/j.ssc.2011.11.043

DO - 10.1016/j.ssc.2011.11.043

M3 - Article

AN - SCOPUS:84856338004

VL - 152

SP - 440

EP - 442

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 5

ER -

Pressure-induced semiconductor-metal phase transition in Mg ₂Si

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Keywords

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