Pressure-induced semiconductor-metal phase transition in Mg 2Si

Wanbin Ren, Yonghao Han, Cailong Liu, Ningning Su, Yan Li, Boheng Ma, Yanzhang Ma, Chunxiao Gao

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


In situ electrical resistivity measurement of powdered Mg 2Si has been performed in a diamond anvil cell up to 25.4 GPa. At about 22.2 GPa, Mg 2Si underwent a pressure-induced semiconductor-metal phase transition that took place in the Ni 2In-type structure rather than the anti-fluorite structure predicted theoretically. The other phases (anti-fluorite and anti-cotunnite) belong to the semiconductor phase.

Original languageEnglish
Pages (from-to)440-442
Number of pages3
JournalSolid State Communications
Issue number5
StatePublished - Mar 2012


  • A. Semiconductors
  • D. Phase transitions
  • E. High pressure


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