Pressure driven semi-metallic phase transition of Sb2Te3

Junkai Zhang, Tingjing Hu, Jiejuan Yan, Feng Ke, Jingshu Wang, Xiaoyan Cui, Xuefei Li, Yanzhang Ma, Jinghai Yang, Chunxiao Gao

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


Herein, we report on the intriguing electrical transport properties of compressed Sb2Te3, a topological insulator. A significant anomaly in Hall coefficient at 3.4 GPa reveals an electronic topological transition deriving from topological morphology changes of Van Hove singularity. Pressure dependent resistivity, Hall coefficient, carrier concentration, and mobility show discontinuous changes at 10.6, 15.2, and 20.8 GPa, i.e., close to the onset of structural phase transitions of Sb2Te3. Moreover, Hall-effect probing discerns the change of conductive mechanism from the lattice vibration dominated to substitutional alloy conduction guiding at 20.8 GPa. Variable-temperature resistivity measurement reveals the transformation from the semi-conductive to semi-metallic phase around 9.0 GPa despite that Sb2Te3 has the priority to hole conduction till 28.2 GPa, indicating that the topological nontrivial properties of Sb2Te3 will be destroyed via pressure effect beyond 9.0 GPa. Definite conductive phase diagram sheds a new light on building Sb2Te3-based application of the future.

Original languageEnglish
Pages (from-to)78-81
Number of pages4
JournalMaterials Letters
StatePublished - Dec 15 2017


  • Electrical properties
  • High pressure
  • Phase transformation
  • Semiconductors


Dive into the research topics of 'Pressure driven semi-metallic phase transition of Sb2Te3'. Together they form a unique fingerprint.

Cite this