TY - JOUR
T1 - Pressure driven semi-metallic phase transition of Sb2Te3
AU - Zhang, Junkai
AU - Hu, Tingjing
AU - Yan, Jiejuan
AU - Ke, Feng
AU - Wang, Jingshu
AU - Cui, Xiaoyan
AU - Li, Xuefei
AU - Ma, Yanzhang
AU - Yang, Jinghai
AU - Gao, Chunxiao
N1 - Publisher Copyright:
© 2017 Elsevier B.V.
PY - 2017/12/15
Y1 - 2017/12/15
N2 - Herein, we report on the intriguing electrical transport properties of compressed Sb2Te3, a topological insulator. A significant anomaly in Hall coefficient at 3.4 GPa reveals an electronic topological transition deriving from topological morphology changes of Van Hove singularity. Pressure dependent resistivity, Hall coefficient, carrier concentration, and mobility show discontinuous changes at 10.6, 15.2, and 20.8 GPa, i.e., close to the onset of structural phase transitions of Sb2Te3. Moreover, Hall-effect probing discerns the change of conductive mechanism from the lattice vibration dominated to substitutional alloy conduction guiding at 20.8 GPa. Variable-temperature resistivity measurement reveals the transformation from the semi-conductive to semi-metallic phase around 9.0 GPa despite that Sb2Te3 has the priority to hole conduction till 28.2 GPa, indicating that the topological nontrivial properties of Sb2Te3 will be destroyed via pressure effect beyond 9.0 GPa. Definite conductive phase diagram sheds a new light on building Sb2Te3-based application of the future.
AB - Herein, we report on the intriguing electrical transport properties of compressed Sb2Te3, a topological insulator. A significant anomaly in Hall coefficient at 3.4 GPa reveals an electronic topological transition deriving from topological morphology changes of Van Hove singularity. Pressure dependent resistivity, Hall coefficient, carrier concentration, and mobility show discontinuous changes at 10.6, 15.2, and 20.8 GPa, i.e., close to the onset of structural phase transitions of Sb2Te3. Moreover, Hall-effect probing discerns the change of conductive mechanism from the lattice vibration dominated to substitutional alloy conduction guiding at 20.8 GPa. Variable-temperature resistivity measurement reveals the transformation from the semi-conductive to semi-metallic phase around 9.0 GPa despite that Sb2Te3 has the priority to hole conduction till 28.2 GPa, indicating that the topological nontrivial properties of Sb2Te3 will be destroyed via pressure effect beyond 9.0 GPa. Definite conductive phase diagram sheds a new light on building Sb2Te3-based application of the future.
KW - Electrical properties
KW - High pressure
KW - Phase transformation
KW - Semiconductors
UR - http://www.scopus.com/inward/record.url?scp=85026550058&partnerID=8YFLogxK
U2 - 10.1016/j.matlet.2017.07.122
DO - 10.1016/j.matlet.2017.07.122
M3 - Article
AN - SCOPUS:85026550058
SN - 0167-577X
VL - 209
SP - 78
EP - 81
JO - Materials Letters
JF - Materials Letters
ER -