Polarization of III-nitride blue and ultraviolet light-emitting diodes

J. Shakya; K. Knabe; K. H. Kim; J. Li; J. Y. Lin; H. X. Jiang

doi:10.1063/1.1875751

Polarization of III-nitride blue and ultraviolet light-emitting diodes

J. Shakya, K. Knabe, K. H. Kim, J. Li, J. Y. Lin, H. X. Jiang

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Abstract

Polarization-resolved electroluminescence studies of III-nitride blue and ultraviolet (UV) light-emitting diodes (LEDs) were performed. The LEDs were fabricated on nitride materials grown by metalorganic chemical vapor deposition on sapphire substrates (0001). Transverse electric (TE) polarization dominates in the InGaNGaN quantum-well (QW) blue LEDs (λ′ =458 nm), whereas transverse magnetic (TM) polarization is dominant in the AlInGaN QW UV LEDs (λ=333 nm). For the case of edge emission in blue LEDs, a ratio (r= I⊥ I∥) of about 1.8:1 was observed between the EL intensities with polarization E⊥c (TE mode) and E∥c (TM mode), which corresponds to a degree of polarization ~0.29. The UV LEDs exhibit a ratio r of about 1:2.3, corresponding to a degree of polarization ~0.4. This is due to the fact that the degree of polarization of the bandedge emission of the Alx Iny Ga1-x-y N active layer changes with Al concentration. The low emission efficiency of nitride UV LEDs is partly related to this polarization property. Possible consequences and ways to enhance UV emitter performances related to this unique polarization property are discussed.

Original language	English
Article number	091107
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	9
DOIs	https://doi.org/10.1063/1.1875751
State	Published - Feb 28 2005

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@article{31d5350a4ae54809817b1f18b66194f8,

title = "Polarization of III-nitride blue and ultraviolet light-emitting diodes",

abstract = "Polarization-resolved electroluminescence studies of III-nitride blue and ultraviolet (UV) light-emitting diodes (LEDs) were performed. The LEDs were fabricated on nitride materials grown by metalorganic chemical vapor deposition on sapphire substrates (0001). Transverse electric (TE) polarization dominates in the InGaNGaN quantum-well (QW) blue LEDs (λ′ =458 nm), whereas transverse magnetic (TM) polarization is dominant in the AlInGaN QW UV LEDs (λ=333 nm). For the case of edge emission in blue LEDs, a ratio (r= I⊥ I∥) of about 1.8:1 was observed between the EL intensities with polarization E⊥c (TE mode) and E∥c (TM mode), which corresponds to a degree of polarization ~0.29. The UV LEDs exhibit a ratio r of about 1:2.3, corresponding to a degree of polarization ~0.4. This is due to the fact that the degree of polarization of the bandedge emission of the Alx Iny Ga1-x-y N active layer changes with Al concentration. The low emission efficiency of nitride UV LEDs is partly related to this polarization property. Possible consequences and ways to enhance UV emitter performances related to this unique polarization property are discussed.",

author = "J. Shakya and K. Knabe and Kim, {K. H.} and J. Li and Lin, {J. Y.} and Jiang, {H. X.}",

note = "Funding Information: The authors wish to acknowledge support by grants from ARO, DOE, NSF, DARPA.",

year = "2005",

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doi = "10.1063/1.1875751",

language = "English",

volume = "86",

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T1 - Polarization of III-nitride blue and ultraviolet light-emitting diodes

AU - Shakya, J.

AU - Knabe, K.

AU - Kim, K. H.

AU - Li, J.

AU - Lin, J. Y.

AU - Jiang, H. X.

N1 - Funding Information: The authors wish to acknowledge support by grants from ARO, DOE, NSF, DARPA.

PY - 2005/2/28

Y1 - 2005/2/28

N2 - Polarization-resolved electroluminescence studies of III-nitride blue and ultraviolet (UV) light-emitting diodes (LEDs) were performed. The LEDs were fabricated on nitride materials grown by metalorganic chemical vapor deposition on sapphire substrates (0001). Transverse electric (TE) polarization dominates in the InGaNGaN quantum-well (QW) blue LEDs (λ′ =458 nm), whereas transverse magnetic (TM) polarization is dominant in the AlInGaN QW UV LEDs (λ=333 nm). For the case of edge emission in blue LEDs, a ratio (r= I⊥ I∥) of about 1.8:1 was observed between the EL intensities with polarization E⊥c (TE mode) and E∥c (TM mode), which corresponds to a degree of polarization ~0.29. The UV LEDs exhibit a ratio r of about 1:2.3, corresponding to a degree of polarization ~0.4. This is due to the fact that the degree of polarization of the bandedge emission of the Alx Iny Ga1-x-y N active layer changes with Al concentration. The low emission efficiency of nitride UV LEDs is partly related to this polarization property. Possible consequences and ways to enhance UV emitter performances related to this unique polarization property are discussed.

AB - Polarization-resolved electroluminescence studies of III-nitride blue and ultraviolet (UV) light-emitting diodes (LEDs) were performed. The LEDs were fabricated on nitride materials grown by metalorganic chemical vapor deposition on sapphire substrates (0001). Transverse electric (TE) polarization dominates in the InGaNGaN quantum-well (QW) blue LEDs (λ′ =458 nm), whereas transverse magnetic (TM) polarization is dominant in the AlInGaN QW UV LEDs (λ=333 nm). For the case of edge emission in blue LEDs, a ratio (r= I⊥ I∥) of about 1.8:1 was observed between the EL intensities with polarization E⊥c (TE mode) and E∥c (TM mode), which corresponds to a degree of polarization ~0.29. The UV LEDs exhibit a ratio r of about 1:2.3, corresponding to a degree of polarization ~0.4. This is due to the fact that the degree of polarization of the bandedge emission of the Alx Iny Ga1-x-y N active layer changes with Al concentration. The low emission efficiency of nitride UV LEDs is partly related to this polarization property. Possible consequences and ways to enhance UV emitter performances related to this unique polarization property are discussed.

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Polarization of III-nitride blue and ultraviolet light-emitting diodes

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