Abstract
A study of plasma etching of GaN, AlN and AlN/AlGaN superlattices for device fabrication was reported. Inductively coupled plasma of chlorine diluted with argon was used under reaction ion conditions to carry out etching. The etching of n- and p-type superlattice was studied using parameters selected for etch rate, anisotropy and surface smoothness.
Original language | English |
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Pages (from-to) | 4688-4690 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 81 |
Issue number | 25 |
DOIs | |
State | Published - Dec 16 2003 |