Plasma etching of AlN/AlGalnN superlattices for device fabrication

K. Zhu, V. Kuryatkov, B. Borisov, G. Kipshidze, S. A. Nikishin, H. Temkin, M. Holtz

Research output: Contribution to journalArticlepeer-review

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A study of plasma etching of GaN, AlN and AlN/AlGaN superlattices for device fabrication was reported. Inductively coupled plasma of chlorine diluted with argon was used under reaction ion conditions to carry out etching. The etching of n- and p-type superlattice was studied using parameters selected for etch rate, anisotropy and surface smoothness.

Original languageEnglish
Pages (from-to)4688-4690
Number of pages3
JournalApplied Physics Letters
Issue number25
StatePublished - Dec 16 2003


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