A study of plasma etching of GaN, AlN and AlN/AlGaN superlattices for device fabrication was reported. Inductively coupled plasma of chlorine diluted with argon was used under reaction ion conditions to carry out etching. The etching of n- and p-type superlattice was studied using parameters selected for etch rate, anisotropy and surface smoothness.
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Dec 16 2003|