Plasma etching of AlN/AlGalnN superlattices for device fabrication

K. Zhu, V. Kuryatkov, B. Borisov, G. Kipshidze, S. A. Nikishin, H. Temkin, M. Holtz

Research output: Contribution to journalArticlepeer-review

43 Scopus citations

Abstract

A study of plasma etching of GaN, AlN and AlN/AlGaN superlattices for device fabrication was reported. Inductively coupled plasma of chlorine diluted with argon was used under reaction ion conditions to carry out etching. The etching of n- and p-type superlattice was studied using parameters selected for etch rate, anisotropy and surface smoothness.

Original languageEnglish
Pages (from-to)4688-4690
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number25
DOIs
StatePublished - Dec 16 2003

Fingerprint Dive into the research topics of 'Plasma etching of AlN/AlGalnN superlattices for device fabrication'. Together they form a unique fingerprint.

Cite this