Piezoelectric effects in GaN/AlGaN multiple quantum wells probed by picosecond time-resolved photoluminescence

H. S. Kim; J. Y. Lin; H. X. Jiang; W. W. Chow; A. Botchkarev; H. Morkoç

Piezoelectric effects in GaN/AlGaN multiple quantum wells probed by picosecond time-resolved photoluminescence

H. S. Kim, J. Y. Lin, H. X. Jiang, W. W. Chow, A. Botchkarev, H. Morkoç

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Piezoelectric effects in GaN/AlGaN multiple quantum wells (MQWs) have been directly probed by picosecond time-resolved photoluminescence (PL) spectroscopy. The time-resolved PL spectra of the 40 angstrom well MQWs reveal that the PL transition peak position is in fact blueshifted at early delay times due to the collective effects of quantum confinement of carriers, piezoelectric field, and Coulomb screening. However, the spectral peak position shifts toward lower energies as the delay time increases and becomes redshifted at longer delay times. By comparing experimental and calculation results, we have obtained a low limit of the piezoelectric field strength to be about 560 kV/cm in the 40 angstrom well GaN/Al_0.15Ga_0.85N MQWs.

Original language	English
Pages (from-to)	G3.3
Journal	Materials Research Society Symposium - Proceedings
Volume	537
State	Published - 1999
Event	Proceedings of the 1998 MRS Fall Meeting - Symposium on 'GaN and Related Alloys' - Boston, MA, USA Duration: Nov 30 1998 → Dec 4 1998

Cite this

@article{f6a31ea8270e4029baf26b9d283ce13e,

title = "Piezoelectric effects in GaN/AlGaN multiple quantum wells probed by picosecond time-resolved photoluminescence",

abstract = "Piezoelectric effects in GaN/AlGaN multiple quantum wells (MQWs) have been directly probed by picosecond time-resolved photoluminescence (PL) spectroscopy. The time-resolved PL spectra of the 40 angstrom well MQWs reveal that the PL transition peak position is in fact blueshifted at early delay times due to the collective effects of quantum confinement of carriers, piezoelectric field, and Coulomb screening. However, the spectral peak position shifts toward lower energies as the delay time increases and becomes redshifted at longer delay times. By comparing experimental and calculation results, we have obtained a low limit of the piezoelectric field strength to be about 560 kV/cm in the 40 angstrom well GaN/Al0.15Ga0.85N MQWs.",

author = "Kim, {H. S.} and Lin, {J. Y.} and Jiang, {H. X.} and Chow, {W. W.} and A. Botchkarev and H. Morko{\c c}",

year = "1999",

language = "English",

volume = "537",

pages = "G3.3",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "null ; Conference date: 30-11-1998 Through 04-12-1998",

}

TY - JOUR

T1 - Piezoelectric effects in GaN/AlGaN multiple quantum wells probed by picosecond time-resolved photoluminescence

AU - Kim, H. S.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Chow, W. W.

AU - Botchkarev, A.

AU - Morkoç, H.

PY - 1999

Y1 - 1999

N2 - Piezoelectric effects in GaN/AlGaN multiple quantum wells (MQWs) have been directly probed by picosecond time-resolved photoluminescence (PL) spectroscopy. The time-resolved PL spectra of the 40 angstrom well MQWs reveal that the PL transition peak position is in fact blueshifted at early delay times due to the collective effects of quantum confinement of carriers, piezoelectric field, and Coulomb screening. However, the spectral peak position shifts toward lower energies as the delay time increases and becomes redshifted at longer delay times. By comparing experimental and calculation results, we have obtained a low limit of the piezoelectric field strength to be about 560 kV/cm in the 40 angstrom well GaN/Al0.15Ga0.85N MQWs.

AB - Piezoelectric effects in GaN/AlGaN multiple quantum wells (MQWs) have been directly probed by picosecond time-resolved photoluminescence (PL) spectroscopy. The time-resolved PL spectra of the 40 angstrom well MQWs reveal that the PL transition peak position is in fact blueshifted at early delay times due to the collective effects of quantum confinement of carriers, piezoelectric field, and Coulomb screening. However, the spectral peak position shifts toward lower energies as the delay time increases and becomes redshifted at longer delay times. By comparing experimental and calculation results, we have obtained a low limit of the piezoelectric field strength to be about 560 kV/cm in the 40 angstrom well GaN/Al0.15Ga0.85N MQWs.

UR - http://www.scopus.com/inward/record.url?scp=17644447125&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:17644447125

VL - 537

SP - G3.3

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

Y2 - 30 November 1998 through 4 December 1998

ER -

Piezoelectric effects in GaN/AlGaN multiple quantum wells probed by picosecond time-resolved photoluminescence

Abstract

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