| Original language | English |
|---|---|
| Pages (from-to) | 191–199 |
| Journal | Journal of Computational Electronics |
| State | Published - 2016 |
Physics-based simulation of 4H-SIC DMOSFET structure under inductive switching
Bejoy N Pushpakaran, Stephen Bayne, Aderinto A Ogunniyi
Research output: Contribution to journal › Article › peer-review