| Original language | English |
|---|---|
| Pages (from-to) | 1-9 |
| Journal | Journal of Computational Electronics |
| State | Published - Nov 2015 |
Physics-based simulation of 4H-SIC DMOSFET structure under inductive switching
Bejoy Pushpakaran, Stephen Bayne, Aderinto Ogunniyi
Research output: Contribution to journal › Article › peer-review