Physics-based simulation of 4H-SIC DMOSFET structure under inductive switching

Bejoy Pushpakaran, Stephen Bayne, Aderinto Ogunniyi

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)1-9
JournalJournal of Computational Electronics
StatePublished - Nov 2015

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