The unique design of Silicon Carbide (SiC) Junction Barrier Schottky (JBS) diode has proved its superiority over silicon in the field of high energy density pulsed power applications. JBS diode design enables the development of high blocking voltage silicon carbide rectifiers with low ON-state voltage drop, low leakage and negligible reverse recovery. In pulsed power applications, devices get driven above their rated current carrying capacity for a transient duration. Under this scenario, it becomes critical to have a thorough understanding of the electro-thermal behavior of the device under pulsed condition. This research focuses on the design and simulation of a 4H-SiC JBS diode structure in Silvaco ATLAS software under steady state and pulsed conditions. Physics based models were incorporated to account for drift diffusion process, mobility, impact ionization and lattice heating the JBS diode was designed for a blocking voltage of 3.3 kV and an ON-state current density of 100 A/cm2. A schottky barrier height of 1.1 eV was selected for the device. An array of interdigitated P+ regions with optimized separation was designed to shield the schottky interface from the high blocking electric field without affecting the ON state characteristics the simulation results were used to analyze breakdown electric field distribution, forward current conduction path, switching performance and areas of localized lattice heating the diode structure was simulated under pulsed condition pertaining to 500 A/cm2 current density and the lattice temperature profile was analyzed to identify the formation of thermal hot spots in the device lattice and possible failure mechanism the JBS diode structure was simulated for its reverse recovery at varying magnitudes of turn OFF di/dt for an ON-state current density of 100 A/cm2.