Photoresponsivity of ultraviolet detectors based on InxAlyGa1-x-yN quaternary alloys

T. N. Oder; J. Li; J. Y. Lin; H. X. Jiang

doi:10.1063/1.1306540

Photoresponsivity of ultraviolet detectors based on In_xAl_yGa_1-x-yN quaternary alloys

T. N. Oder, J. Li, J. Y. Lin, H. X. Jiang

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Abstract

We describe the growth, fabrication, and characterization of an ultraviolet (UV) photoconductive detector based on In_xAl_yGa_1-x-yN quaternary alloy that is lattice matched to GaN. The detector consisted of 0.1 μm In_xAl_yGa_1-x-yN alloy grown on 0.5-1.0 μm GaN epilayer by metalorganic chemical vapor deposition. With varying indium concentration, the cut-off wavelength of the In_xAl_yGa_1-x-yN detectors could be varied to the deep UV range. The most important and intriguing result is that the responsivity of the In_xAl_yGa_1-x-yN quaternary alloy exceeded that of AlGaN alloy of a comparable cutoff wavelength by a factor of five. This makes the nitride quaternary alloy very important material for solar blind UV detectors applications particularly in the deep UV range where Al rich AlGaN alloys have problems with low quantum efficiency and cracks due in part to lattice mismatch with GaN. The advantages of In_xAl_yGa_1-x-yN quaternary over AlGaN ternary alloys for UV detector applications are also discussed.

Original language	English
Pages (from-to)	791-793
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	6
DOIs	https://doi.org/10.1063/1.1306540
State	Published - Aug 7 2000

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title = "Photoresponsivity of ultraviolet detectors based on InxAlyGa1-x-yN quaternary alloys",

abstract = "We describe the growth, fabrication, and characterization of an ultraviolet (UV) photoconductive detector based on InxAlyGa1-x-yN quaternary alloy that is lattice matched to GaN. The detector consisted of 0.1 μm InxAlyGa1-x-yN alloy grown on 0.5-1.0 μm GaN epilayer by metalorganic chemical vapor deposition. With varying indium concentration, the cut-off wavelength of the InxAlyGa1-x-yN detectors could be varied to the deep UV range. The most important and intriguing result is that the responsivity of the InxAlyGa1-x-yN quaternary alloy exceeded that of AlGaN alloy of a comparable cutoff wavelength by a factor of five. This makes the nitride quaternary alloy very important material for solar blind UV detectors applications particularly in the deep UV range where Al rich AlGaN alloys have problems with low quantum efficiency and cracks due in part to lattice mismatch with GaN. The advantages of InxAlyGa1-x-yN quaternary over AlGaN ternary alloys for UV detector applications are also discussed.",

author = "Oder, {T. N.} and J. Li and Lin, {J. Y.} and Jiang, {H. X.}",

year = "2000",

month = aug,

day = "7",

doi = "10.1063/1.1306540",

language = "English",

volume = "77",

pages = "791--793",

journal = "Applied Physics Letters",

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T1 - Photoresponsivity of ultraviolet detectors based on InxAlyGa1-x-yN quaternary alloys

AU - Oder, T. N.

AU - Li, J.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2000/8/7

Y1 - 2000/8/7

N2 - We describe the growth, fabrication, and characterization of an ultraviolet (UV) photoconductive detector based on InxAlyGa1-x-yN quaternary alloy that is lattice matched to GaN. The detector consisted of 0.1 μm InxAlyGa1-x-yN alloy grown on 0.5-1.0 μm GaN epilayer by metalorganic chemical vapor deposition. With varying indium concentration, the cut-off wavelength of the InxAlyGa1-x-yN detectors could be varied to the deep UV range. The most important and intriguing result is that the responsivity of the InxAlyGa1-x-yN quaternary alloy exceeded that of AlGaN alloy of a comparable cutoff wavelength by a factor of five. This makes the nitride quaternary alloy very important material for solar blind UV detectors applications particularly in the deep UV range where Al rich AlGaN alloys have problems with low quantum efficiency and cracks due in part to lattice mismatch with GaN. The advantages of InxAlyGa1-x-yN quaternary over AlGaN ternary alloys for UV detector applications are also discussed.

AB - We describe the growth, fabrication, and characterization of an ultraviolet (UV) photoconductive detector based on InxAlyGa1-x-yN quaternary alloy that is lattice matched to GaN. The detector consisted of 0.1 μm InxAlyGa1-x-yN alloy grown on 0.5-1.0 μm GaN epilayer by metalorganic chemical vapor deposition. With varying indium concentration, the cut-off wavelength of the InxAlyGa1-x-yN detectors could be varied to the deep UV range. The most important and intriguing result is that the responsivity of the InxAlyGa1-x-yN quaternary alloy exceeded that of AlGaN alloy of a comparable cutoff wavelength by a factor of five. This makes the nitride quaternary alloy very important material for solar blind UV detectors applications particularly in the deep UV range where Al rich AlGaN alloys have problems with low quantum efficiency and cracks due in part to lattice mismatch with GaN. The advantages of InxAlyGa1-x-yN quaternary over AlGaN ternary alloys for UV detector applications are also discussed.

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DO - 10.1063/1.1306540

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EP - 793

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Photoresponsivity of ultraviolet detectors based on In_xAl_yGa_1-x-yN quaternary alloys

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