We investigate δ-doped GaAs samples grown by molecular-beam epitaxy with different silicon areal concentration and cap layer thickness, using photoreflectance spectroscopy. The features observed on the high-energy side of the fundamental gap are attributed to transitions involving electronic sub-bands in the δ-doped potential well that take into account the diffusion of the dopants.
|Number of pages||3|
|Journal||Journal of Applied Physics|
|State||Published - 1990|