Photoreflectance measurements on Si δ-doped GaAs samples grown by molecular-beam epitaxy

A. A. Bernussi, F. Iikawa, P. Motisuke, P. Basmaji, M. Siu Li, O. Hipolito

Research output: Contribution to journalArticle

18 Scopus citations

Abstract

We investigate δ-doped GaAs samples grown by molecular-beam epitaxy with different silicon areal concentration and cap layer thickness, using photoreflectance spectroscopy. The features observed on the high-energy side of the fundamental gap are attributed to transitions involving electronic sub-bands in the δ-doped potential well that take into account the diffusion of the dopants.

Original languageEnglish
Pages (from-to)4149-4151
Number of pages3
JournalJournal of Applied Physics
Volume67
Issue number9
DOIs
StatePublished - 1990

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