Photoreflectance measurements on Si δ-doped GaAs samples grown by molecular-beam epitaxy

A. A. Bernussi; F. Iikawa; P. Motisuke; P. Basmaji; M. Siu Li; O. Hipolito

doi:10.1063/1.344976

Photoreflectance measurements on Si δ-doped GaAs samples grown by molecular-beam epitaxy

A. A. Bernussi, F. Iikawa, P. Motisuke, P. Basmaji, M. Siu Li, O. Hipolito

Electrical and Computer Engineering

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Abstract

We investigate δ-doped GaAs samples grown by molecular-beam epitaxy with different silicon areal concentration and cap layer thickness, using photoreflectance spectroscopy. The features observed on the high-energy side of the fundamental gap are attributed to transitions involving electronic sub-bands in the δ-doped potential well that take into account the diffusion of the dopants.

Original language	English
Pages (from-to)	4149-4151
Number of pages	3
Journal	Journal of Applied Physics
Volume	67
Issue number	9
DOIs	https://doi.org/10.1063/1.344976
State	Published - 1990

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title = "Photoreflectance measurements on Si δ-doped GaAs samples grown by molecular-beam epitaxy",

abstract = "We investigate δ-doped GaAs samples grown by molecular-beam epitaxy with different silicon areal concentration and cap layer thickness, using photoreflectance spectroscopy. The features observed on the high-energy side of the fundamental gap are attributed to transitions involving electronic sub-bands in the δ-doped potential well that take into account the diffusion of the dopants.",

author = "Bernussi, {A. A.} and F. Iikawa and P. Motisuke and P. Basmaji and Li, {M. Siu} and O. Hipolito",

note = "Funding Information: This work was supported by the Business for University Entrepreneurship Center, funded by the Korea Small and Medium Business Administration in 2015~2016. The authors gratefully acknowledge this support.",

year = "1990",

doi = "10.1063/1.344976",

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volume = "67",

pages = "4149--4151",

journal = "Journal of Applied Physics",

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T1 - Photoreflectance measurements on Si δ-doped GaAs samples grown by molecular-beam epitaxy

AU - Bernussi, A. A.

AU - Iikawa, F.

AU - Motisuke, P.

AU - Basmaji, P.

AU - Li, M. Siu

AU - Hipolito, O.

N1 - Funding Information: This work was supported by the Business for University Entrepreneurship Center, funded by the Korea Small and Medium Business Administration in 2015~2016. The authors gratefully acknowledge this support.

PY - 1990

Y1 - 1990

N2 - We investigate δ-doped GaAs samples grown by molecular-beam epitaxy with different silicon areal concentration and cap layer thickness, using photoreflectance spectroscopy. The features observed on the high-energy side of the fundamental gap are attributed to transitions involving electronic sub-bands in the δ-doped potential well that take into account the diffusion of the dopants.

AB - We investigate δ-doped GaAs samples grown by molecular-beam epitaxy with different silicon areal concentration and cap layer thickness, using photoreflectance spectroscopy. The features observed on the high-energy side of the fundamental gap are attributed to transitions involving electronic sub-bands in the δ-doped potential well that take into account the diffusion of the dopants.

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U2 - 10.1063/1.344976

DO - 10.1063/1.344976

M3 - Article

AN - SCOPUS:4243118315

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VL - 67

SP - 4149

EP - 4151

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -

Photoreflectance measurements on Si δ-doped GaAs samples grown by molecular-beam epitaxy

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