Photoreflectance characterization of δ-doped p-GaAs

A. A. Bernussi, F. Iikawa, P. Motisuke, P. Basmaji, M. Siu Li, O. Hipolito

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Silicon δ-doped GaAs samples grown by molecular-beam epitaxy with different dopant concentration and cap layer thickness were investigated by photoreflectance spectroscopy. The features observed above the GaAs fundamental energy gap are temptatively attributed to transitions involving continuous valence band states and quantum-confined states at the conduction band. These interband transition energies are in qualitative agreement with the self-consistent ones calculated taking into account the spreading of dopants.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsFred H. Pollak, Manuel Cardona, David E. Aspnes
PublisherPubl by Int Soc for Optical Engineering
Pages348-358
Number of pages11
ISBN (Print)0819403377
StatePublished - 1990
EventInternational Conference on Modulation Spectroscopy - San Diego, CA, USA
Duration: Mar 19 1990Mar 21 1990

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume1286
ISSN (Print)0277-786X

Conference

ConferenceInternational Conference on Modulation Spectroscopy
CitySan Diego, CA, USA
Period03/19/9003/21/90

Fingerprint Dive into the research topics of 'Photoreflectance characterization of δ-doped p-GaAs'. Together they form a unique fingerprint.

Cite this