Photoreflectance characterization of δ-doped p-GaAs

A. A. Bernussi; F. Iikawa; P. Motisuke; P. Basmaji; M. Siu Li; O. Hipolito

Photoreflectance characterization of δ-doped p-GaAs

A. A. Bernussi, F. Iikawa, P. Motisuke, P. Basmaji, M. Siu Li, O. Hipolito

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

Silicon δ-doped GaAs samples grown by molecular-beam epitaxy with different dopant concentration and cap layer thickness were investigated by photoreflectance spectroscopy. The features observed above the GaAs fundamental energy gap are temptatively attributed to transitions involving continuous valence band states and quantum-confined states at the conduction band. These interband transition energies are in qualitative agreement with the self-consistent ones calculated taking into account the spreading of dopants.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	Fred H. Pollak, Manuel Cardona, David E. Aspnes
Publisher	Publ by Int Soc for Optical Engineering
Pages	348-358
Number of pages	11
ISBN (Print)	0819403377
State	Published - 1990
Event	International Conference on Modulation Spectroscopy - San Diego, CA, USA Duration: Mar 19 1990 → Mar 21 1990

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1286
ISSN (Print)	0277-786X

Conference

Conference	International Conference on Modulation Spectroscopy
City	San Diego, CA, USA
Period	03/19/90 → 03/21/90

Cite this

Bernussi, A. A., Iikawa, F., Motisuke, P., Basmaji, P., Li, M. S., & Hipolito, O. (1990). Photoreflectance characterization of δ-doped p-GaAs. In F. H. Pollak, M. Cardona, & D. E. Aspnes (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (pp. 348-358). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1286). Publ by Int Soc for Optical Engineering.

Bernussi, A. A. ; Iikawa, F. ; Motisuke, P. et al. / Photoreflectance characterization of δ-doped p-GaAs. Proceedings of SPIE - The International Society for Optical Engineering. editor / Fred H. Pollak ; Manuel Cardona ; David E. Aspnes. Publ by Int Soc for Optical Engineering, 1990. pp. 348-358 (Proceedings of SPIE - The International Society for Optical Engineering).

@inproceedings{7874a0146c8e423dbd33511f95711308,

title = "Photoreflectance characterization of δ-doped p-GaAs",

abstract = "Silicon δ-doped GaAs samples grown by molecular-beam epitaxy with different dopant concentration and cap layer thickness were investigated by photoreflectance spectroscopy. The features observed above the GaAs fundamental energy gap are temptatively attributed to transitions involving continuous valence band states and quantum-confined states at the conduction band. These interband transition energies are in qualitative agreement with the self-consistent ones calculated taking into account the spreading of dopants.",

author = "Bernussi, {A. A.} and F. Iikawa and P. Motisuke and P. Basmaji and Li, {M. Siu} and O. Hipolito",

year = "1990",

language = "English",

isbn = "0819403377",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "Publ by Int Soc for Optical Engineering",

pages = "348--358",

editor = "Pollak, {Fred H.} and Manuel Cardona and Aspnes, {David E.}",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

note = "International Conference on Modulation Spectroscopy ; Conference date: 19-03-1990 Through 21-03-1990",

}

Bernussi, AA, Iikawa, F, Motisuke, P, Basmaji, P, Li, MS & Hipolito, O 1990, Photoreflectance characterization of δ-doped p-GaAs. in FH Pollak, M Cardona & DE Aspnes (eds), Proceedings of SPIE - The International Society for Optical Engineering. Proceedings of SPIE - The International Society for Optical Engineering, vol. 1286, Publ by Int Soc for Optical Engineering, pp. 348-358, International Conference on Modulation Spectroscopy, San Diego, CA, USA, 03/19/90.

Photoreflectance characterization of δ-doped p-GaAs. / Bernussi, A. A.; Iikawa, F.; Motisuke, P. et al.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / Fred H. Pollak; Manuel Cardona; David E. Aspnes. Publ by Int Soc for Optical Engineering, 1990. p. 348-358 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1286).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Photoreflectance characterization of δ-doped p-GaAs

AU - Bernussi, A. A.

AU - Iikawa, F.

AU - Motisuke, P.

AU - Basmaji, P.

AU - Li, M. Siu

AU - Hipolito, O.

PY - 1990

Y1 - 1990

N2 - Silicon δ-doped GaAs samples grown by molecular-beam epitaxy with different dopant concentration and cap layer thickness were investigated by photoreflectance spectroscopy. The features observed above the GaAs fundamental energy gap are temptatively attributed to transitions involving continuous valence band states and quantum-confined states at the conduction band. These interband transition energies are in qualitative agreement with the self-consistent ones calculated taking into account the spreading of dopants.

AB - Silicon δ-doped GaAs samples grown by molecular-beam epitaxy with different dopant concentration and cap layer thickness were investigated by photoreflectance spectroscopy. The features observed above the GaAs fundamental energy gap are temptatively attributed to transitions involving continuous valence band states and quantum-confined states at the conduction band. These interband transition energies are in qualitative agreement with the self-consistent ones calculated taking into account the spreading of dopants.

UR - http://www.scopus.com/inward/record.url?scp=0025660603&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0025660603

SN - 0819403377

T3 - Proceedings of SPIE - The International Society for Optical Engineering

SP - 348

EP - 358

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Pollak, Fred H.

A2 - Cardona, Manuel

A2 - Aspnes, David E.

PB - Publ by Int Soc for Optical Engineering

T2 - International Conference on Modulation Spectroscopy

Y2 - 19 March 1990 through 21 March 1990

ER -

Bernussi AA, Iikawa F, Motisuke P, Basmaji P, Li MS, Hipolito O. Photoreflectance characterization of δ-doped p-GaAs. In Pollak FH, Cardona M, Aspnes DE, editors, Proceedings of SPIE - The International Society for Optical Engineering. Publ by Int Soc for Optical Engineering. 1990. p. 348-358. (Proceedings of SPIE - The International Society for Optical Engineering).

Photoreflectance characterization of δ-doped p-GaAs

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