Erbium doped InGaN alloys (InGaN:Er) were grown on Si (001) substrates using metal organic chemical vapor deposition. The growth of epitaxial films was accomplished by depositing InGaN:Er on GaN templates deposited on 7.3° off-oriented Si (001) substrates which were prepared by etching and subsequent selective area growth. X-ray diffraction measurements confirmed the formation of wurtzite InGaN (̄1101) epilayers, which exhibit strong photoluminescence emission at 1.54 μm. The observed emission intensity at 1.54 μm was comparable to that from similar alloys grown on GaN/AlN/ Al2 O 3 templates. These results indicate the high potential for on-chip integration of erbium based photonic devices with complementary metal oxide semiconductor technology.