Photoluminescence studies of Si-doped AlN epilayers

K. B. Nam, M. L. Nakarmi, J. Li, J. Y. Lin, H. X. Jiang

Research output: Contribution to journalArticle

47 Scopus citations

Abstract

The growth of Si-doped AlN epilayers by metalorganic chemical vapor deposition on sapphire substrates was discussed. The optical transitions in the grown epilayers were also studied. The deep ultraviolet picosecond time-resolved photoluminescence (PL) spectroscopy was used.

Original languageEnglish
Pages (from-to)2787-2789
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number14
DOIs
StatePublished - Oct 6 2003

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