Photoluminescence studies of impurity transitions in AlGaN alloys

N. Nepal; M. L. Nakarmi; J. Lin; H. X. Jiang

doi:10.1063/1.2337856

Photoluminescence studies of impurity transitions in AlGaN alloys

N. Nepal, M. L. Nakarmi, J. Lin, H. X. Jiang

Electrical and Computer Engineering

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Abstract

Deep ultraviolet photoluminescence (PL) spectroscopy has been employed to investigate impurity transitions in Si doped Al-rich AlGaN alloys. In addition to the previously reported donor compensating centers - isolated cation vacancy with three negative charges (V _III) ^3- and cation vacancy complex with two-negative charges (V _III complex) ^2- - a group of impurity transitions with higher emission energies has been observed in AlGaN alloys grown under different conditions, which has been assigned to the recombination between shallow donors and cation vacancy complexes with one-negative charge (V _III complex) ^-1. Similar to (V _III) ^3- and (V _III complex) ^2-, the energy levels of (V _III complex) ^1- deep acceptors in Al _xGa _1-xN (0≤x≤1) alloys are pinned to a common energy level in vacuum. A strong correlation between the resistivity and PL emission intensities of the impurity transitions associated with cation vacancies (and complexes) was found.

Original language	English
Article number	092107
Journal	Applied Physics Letters
Volume	89
Issue number	9
DOIs	https://doi.org/10.1063/1.2337856
State	Published - 2006

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title = "Photoluminescence studies of impurity transitions in AlGaN alloys",

abstract = "Deep ultraviolet photoluminescence (PL) spectroscopy has been employed to investigate impurity transitions in Si doped Al-rich AlGaN alloys. In addition to the previously reported donor compensating centers - isolated cation vacancy with three negative charges (V III) 3- and cation vacancy complex with two-negative charges (V III complex) 2- - a group of impurity transitions with higher emission energies has been observed in AlGaN alloys grown under different conditions, which has been assigned to the recombination between shallow donors and cation vacancy complexes with one-negative charge (V III complex) -1. Similar to (V III) 3- and (V III complex) 2-, the energy levels of (V III complex) 1- deep acceptors in Al xGa 1-xN (0≤x≤1) alloys are pinned to a common energy level in vacuum. A strong correlation between the resistivity and PL emission intensities of the impurity transitions associated with cation vacancies (and complexes) was found.",

author = "N. Nepal and Nakarmi, {M. L.} and J. Lin and Jiang, {H. X.}",

note = "Funding Information: This research is supported by grants from NSF (DMR-0504601). ",

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doi = "10.1063/1.2337856",

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journal = "Applied Physics Letters",

issn = "0003-6951",

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T1 - Photoluminescence studies of impurity transitions in AlGaN alloys

AU - Nepal, N.

AU - Nakarmi, M. L.

AU - Lin, J.

AU - Jiang, H. X.

N1 - Funding Information: This research is supported by grants from NSF (DMR-0504601).

PY - 2006

Y1 - 2006

N2 - Deep ultraviolet photoluminescence (PL) spectroscopy has been employed to investigate impurity transitions in Si doped Al-rich AlGaN alloys. In addition to the previously reported donor compensating centers - isolated cation vacancy with three negative charges (V III) 3- and cation vacancy complex with two-negative charges (V III complex) 2- - a group of impurity transitions with higher emission energies has been observed in AlGaN alloys grown under different conditions, which has been assigned to the recombination between shallow donors and cation vacancy complexes with one-negative charge (V III complex) -1. Similar to (V III) 3- and (V III complex) 2-, the energy levels of (V III complex) 1- deep acceptors in Al xGa 1-xN (0≤x≤1) alloys are pinned to a common energy level in vacuum. A strong correlation between the resistivity and PL emission intensities of the impurity transitions associated with cation vacancies (and complexes) was found.

AB - Deep ultraviolet photoluminescence (PL) spectroscopy has been employed to investigate impurity transitions in Si doped Al-rich AlGaN alloys. In addition to the previously reported donor compensating centers - isolated cation vacancy with three negative charges (V III) 3- and cation vacancy complex with two-negative charges (V III complex) 2- - a group of impurity transitions with higher emission energies has been observed in AlGaN alloys grown under different conditions, which has been assigned to the recombination between shallow donors and cation vacancy complexes with one-negative charge (V III complex) -1. Similar to (V III) 3- and (V III complex) 2-, the energy levels of (V III complex) 1- deep acceptors in Al xGa 1-xN (0≤x≤1) alloys are pinned to a common energy level in vacuum. A strong correlation between the resistivity and PL emission intensities of the impurity transitions associated with cation vacancies (and complexes) was found.

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VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

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M1 - 092107

ER -

Photoluminescence studies of impurity transitions in AlGaN alloys

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