Photoluminescence properties of erbium doped InGaN epilayers

A. Sedhain; C. Ugolini; J. Y. Lin; H. X. Jiang; J. M. Zavada

doi:10.1063/1.3193532

Photoluminescence properties of erbium doped InGaN epilayers

A. Sedhain, C. Ugolini, J. Y. Lin, H. X. Jiang, J. M. Zavada

Electrical and Computer Engineering

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Abstract

We report on the photoluminescence properties of erbium (Er) doped In _x Ga_1-x Na epilayers synthesized by metal organic chemical vapor deposition. The crystalline quality and surface morphology of Er doped In_0.05 Ga_0.95 N were nearly identical to those of Er doped GaN. The photoluminescence intensity of the 1.54 μm emission in Er doped In_0.05 Ga_0.95 N was an order of magnitude lower than in Er doped GaN and decreased with the increase of the In content. The reduction in 1.54 μm emission intensity was accompanied by enhanced emission intensities of deep level impurity transition lines.

Original language	English
Article number	041113
Journal	Applied Physics Letters
Volume	95
Issue number	4
DOIs	https://doi.org/10.1063/1.3193532
State	Published - 2009

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@article{170c3a77e98049e7bbeee6bdf0521173,

title = "Photoluminescence properties of erbium doped InGaN epilayers",

abstract = "We report on the photoluminescence properties of erbium (Er) doped In x Ga1-x Na epilayers synthesized by metal organic chemical vapor deposition. The crystalline quality and surface morphology of Er doped In0.05 Ga0.95 N were nearly identical to those of Er doped GaN. The photoluminescence intensity of the 1.54 μm emission in Er doped In0.05 Ga0.95 N was an order of magnitude lower than in Er doped GaN and decreased with the increase of the In content. The reduction in 1.54 μm emission intensity was accompanied by enhanced emission intensities of deep level impurity transition lines.",

author = "A. Sedhain and C. Ugolini and Lin, {J. Y.} and Jiang, {H. X.} and Zavada, {J. M.}",

note = "Funding Information: This work is supported by NSF under Grant No. (ECCS-0854619). H.X.J. and J.Y.L. would like to acknowledge the support of Edward Whitacre and Linda Whitacre endowment chair positions through the AT&T Foundation.",

year = "2009",

doi = "10.1063/1.3193532",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AIP Publishing",

number = "4",

}

TY - JOUR

T1 - Photoluminescence properties of erbium doped InGaN epilayers

AU - Sedhain, A.

AU - Ugolini, C.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Zavada, J. M.

N1 - Funding Information: This work is supported by NSF under Grant No. (ECCS-0854619). H.X.J. and J.Y.L. would like to acknowledge the support of Edward Whitacre and Linda Whitacre endowment chair positions through the AT&T Foundation.

PY - 2009

Y1 - 2009

N2 - We report on the photoluminescence properties of erbium (Er) doped In x Ga1-x Na epilayers synthesized by metal organic chemical vapor deposition. The crystalline quality and surface morphology of Er doped In0.05 Ga0.95 N were nearly identical to those of Er doped GaN. The photoluminescence intensity of the 1.54 μm emission in Er doped In0.05 Ga0.95 N was an order of magnitude lower than in Er doped GaN and decreased with the increase of the In content. The reduction in 1.54 μm emission intensity was accompanied by enhanced emission intensities of deep level impurity transition lines.

AB - We report on the photoluminescence properties of erbium (Er) doped In x Ga1-x Na epilayers synthesized by metal organic chemical vapor deposition. The crystalline quality and surface morphology of Er doped In0.05 Ga0.95 N were nearly identical to those of Er doped GaN. The photoluminescence intensity of the 1.54 μm emission in Er doped In0.05 Ga0.95 N was an order of magnitude lower than in Er doped GaN and decreased with the increase of the In content. The reduction in 1.54 μm emission intensity was accompanied by enhanced emission intensities of deep level impurity transition lines.

UR - http://www.scopus.com/inward/record.url?scp=68249131198&partnerID=8YFLogxK

U2 - 10.1063/1.3193532

DO - 10.1063/1.3193532

M3 - Article

AN - SCOPUS:68249131198

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 041113

ER -

Photoluminescence properties of erbium doped InGaN epilayers

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