Photoluminescence properties of erbium doped InGaN epilayers

A. Sedhain, C. Ugolini, J. Y. Lin, H. X. Jiang, J. M. Zavada

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


We report on the photoluminescence properties of erbium (Er) doped In x Ga1-x Na epilayers synthesized by metal organic chemical vapor deposition. The crystalline quality and surface morphology of Er doped In0.05 Ga0.95 N were nearly identical to those of Er doped GaN. The photoluminescence intensity of the 1.54 μm emission in Er doped In0.05 Ga0.95 N was an order of magnitude lower than in Er doped GaN and decreased with the increase of the In content. The reduction in 1.54 μm emission intensity was accompanied by enhanced emission intensities of deep level impurity transition lines.

Original languageEnglish
Article number041113
JournalApplied Physics Letters
Issue number4
StatePublished - 2009


Dive into the research topics of 'Photoluminescence properties of erbium doped InGaN epilayers'. Together they form a unique fingerprint.

Cite this