Photoluminescence properties of AlN homoepilayers with different orientations

A. Sedhain, N. Nepal, M. L. Nakarmi, T. M. Al Tahtamouni, J. Y. Lin, H. X. Jiang, Z. Gu, J. H. Edgar

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Abstract

AlN homoepilayers and heteroepilayers were grown on polar c -plane and nonpolar a -plane and m -plane orientations of AlN bulk and sapphire substrates by metal organic chemical vapor deposition. A systematic comparative study of photoluminescence properties of these samples revealed that all AlN homoepilayers (c, a and m planes) were strain free with an identical band gap of about 6.099 (6.035) eV at 10 (300) K, which is about 42 meV below the band gap of c -plane AlN heteroepilayers grown on sapphire. Also, nonpolar a -plane homoepilayers have the highest emission intensity over all other types of epilayers. We believe that a -plane AlN homoepilayers have the potential to provide orders of magnitude improvement in the performance of new generation deep UV photonic devices.

Original languageEnglish
Article number041905
JournalApplied Physics Letters
Volume93
Issue number4
DOIs
StatePublished - 2008

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