Photoluminescence properties of AlN homoepilayers with different orientations

A. Sedhain; N. Nepal; M. L. Nakarmi; T. M. Al Tahtamouni; J. Y. Lin; H. X. Jiang; Z. Gu; J. H. Edgar

doi:10.1063/1.2965613

Photoluminescence properties of AlN homoepilayers with different orientations

A. Sedhain, N. Nepal, M. L. Nakarmi, T. M. Al Tahtamouni, J. Y. Lin, H. X. Jiang, Z. Gu, J. H. Edgar

Electrical and Computer Engineering

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Abstract

AlN homoepilayers and heteroepilayers were grown on polar c -plane and nonpolar a -plane and m -plane orientations of AlN bulk and sapphire substrates by metal organic chemical vapor deposition. A systematic comparative study of photoluminescence properties of these samples revealed that all AlN homoepilayers (c, a and m planes) were strain free with an identical band gap of about 6.099 (6.035) eV at 10 (300) K, which is about 42 meV below the band gap of c -plane AlN heteroepilayers grown on sapphire. Also, nonpolar a -plane homoepilayers have the highest emission intensity over all other types of epilayers. We believe that a -plane AlN homoepilayers have the potential to provide orders of magnitude improvement in the performance of new generation deep UV photonic devices.

Original language	English
Article number	041905
Journal	Applied Physics Letters
Volume	93
Issue number	4
DOIs	https://doi.org/10.1063/1.2965613
State	Published - 2008

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@article{1a392cf48dde4bb19f3f0bc9635e0619,

title = "Photoluminescence properties of AlN homoepilayers with different orientations",

abstract = "AlN homoepilayers and heteroepilayers were grown on polar c -plane and nonpolar a -plane and m -plane orientations of AlN bulk and sapphire substrates by metal organic chemical vapor deposition. A systematic comparative study of photoluminescence properties of these samples revealed that all AlN homoepilayers (c, a and m planes) were strain free with an identical band gap of about 6.099 (6.035) eV at 10 (300) K, which is about 42 meV below the band gap of c -plane AlN heteroepilayers grown on sapphire. Also, nonpolar a -plane homoepilayers have the highest emission intensity over all other types of epilayers. We believe that a -plane AlN homoepilayers have the potential to provide orders of magnitude improvement in the performance of new generation deep UV photonic devices.",

author = "A. Sedhain and N. Nepal and Nakarmi, {M. L.} and {Al Tahtamouni}, {T. M.} and Lin, {J. Y.} and Jiang, {H. X.} and Z. Gu and Edgar, {J. H.}",

note = "Funding Information: The epigrowth and optical study works were supported by DOE (Grant No. DE-FG 03-96ER45604) and the AlN bulk crystal growth work was supported by NSF (Grant No. DMR 0415116). J. Y. L. and H. X. J. gratefully acknowledge the support of the Linda Whitacre and Edward Whitacre Endowment through the AT & T Foundation. ",

year = "2008",

doi = "10.1063/1.2965613",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AIP Publishing",

number = "4",

}

TY - JOUR

T1 - Photoluminescence properties of AlN homoepilayers with different orientations

AU - Sedhain, A.

AU - Nepal, N.

AU - Nakarmi, M. L.

AU - Al Tahtamouni, T. M.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Gu, Z.

AU - Edgar, J. H.

N1 - Funding Information: The epigrowth and optical study works were supported by DOE (Grant No. DE-FG 03-96ER45604) and the AlN bulk crystal growth work was supported by NSF (Grant No. DMR 0415116). J. Y. L. and H. X. J. gratefully acknowledge the support of the Linda Whitacre and Edward Whitacre Endowment through the AT & T Foundation.

PY - 2008

Y1 - 2008

N2 - AlN homoepilayers and heteroepilayers were grown on polar c -plane and nonpolar a -plane and m -plane orientations of AlN bulk and sapphire substrates by metal organic chemical vapor deposition. A systematic comparative study of photoluminescence properties of these samples revealed that all AlN homoepilayers (c, a and m planes) were strain free with an identical band gap of about 6.099 (6.035) eV at 10 (300) K, which is about 42 meV below the band gap of c -plane AlN heteroepilayers grown on sapphire. Also, nonpolar a -plane homoepilayers have the highest emission intensity over all other types of epilayers. We believe that a -plane AlN homoepilayers have the potential to provide orders of magnitude improvement in the performance of new generation deep UV photonic devices.

AB - AlN homoepilayers and heteroepilayers were grown on polar c -plane and nonpolar a -plane and m -plane orientations of AlN bulk and sapphire substrates by metal organic chemical vapor deposition. A systematic comparative study of photoluminescence properties of these samples revealed that all AlN homoepilayers (c, a and m planes) were strain free with an identical band gap of about 6.099 (6.035) eV at 10 (300) K, which is about 42 meV below the band gap of c -plane AlN heteroepilayers grown on sapphire. Also, nonpolar a -plane homoepilayers have the highest emission intensity over all other types of epilayers. We believe that a -plane AlN homoepilayers have the potential to provide orders of magnitude improvement in the performance of new generation deep UV photonic devices.

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U2 - 10.1063/1.2965613

DO - 10.1063/1.2965613

M3 - Article

AN - SCOPUS:49149103741

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 041905

ER -

Photoluminescence properties of AlN homoepilayers with different orientations

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