Photoluminescence of GaAs films grown by vacuum chemical epitaxy

A. A. Bernussi; C. L. Barreto; M. M.G. Carvalho; P. Motisuke

doi:10.1063/1.341859

Photoluminescence of GaAs films grown by vacuum chemical epitaxy

A. A. Bernussi, C. L. Barreto, M. M.G. Carvalho, P. Motisuke

Electrical and Computer Engineering

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Abstract

GaAs layers grown by vacuum chemical epitaxy (VCE) are investigated by low-temperature photoluminescence. A qualitative relation between the growth parameters and the shallow-impurity-incorporation mechanism is established. It was observed that the predominant shallow acceptor is carbon, and its incorporation during the growth process decreases with the As:Ga ratio, increases with growth temperature until 750°C, and then it diminishes. In this work we compare the characteristics observed in the VCE system with those in conventional molecular-beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD). Our results show that this system contains some advantages from both the MBE and MOCVD systems. The photoluminescence spectra also show that at low As:Ga ratios the generation of As vacancies or its complexes is strongly enhanced.

Original language	English
Pages (from-to)	1358-1362
Number of pages	5
Journal	Journal of Applied Physics
Volume	64
Issue number	3
DOIs	https://doi.org/10.1063/1.341859
State	Published - 1988

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@article{7f993ed28dc5478190083fb35e5d90b5,

title = "Photoluminescence of GaAs films grown by vacuum chemical epitaxy",

abstract = "GaAs layers grown by vacuum chemical epitaxy (VCE) are investigated by low-temperature photoluminescence. A qualitative relation between the growth parameters and the shallow-impurity-incorporation mechanism is established. It was observed that the predominant shallow acceptor is carbon, and its incorporation during the growth process decreases with the As:Ga ratio, increases with growth temperature until 750°C, and then it diminishes. In this work we compare the characteristics observed in the VCE system with those in conventional molecular-beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD). Our results show that this system contains some advantages from both the MBE and MOCVD systems. The photoluminescence spectra also show that at low As:Ga ratios the generation of As vacancies or its complexes is strongly enhanced.",

author = "Bernussi, {A. A.} and Barreto, {C. L.} and Carvalho, {M. M.G.} and P. Motisuke",

year = "1988",

doi = "10.1063/1.341859",

language = "English",

volume = "64",

pages = "1358--1362",

journal = "Journal of Applied Physics",

issn = "0021-8979",

number = "3",

}

TY - JOUR

T1 - Photoluminescence of GaAs films grown by vacuum chemical epitaxy

AU - Bernussi, A. A.

AU - Barreto, C. L.

AU - Carvalho, M. M.G.

AU - Motisuke, P.

PY - 1988

Y1 - 1988

N2 - GaAs layers grown by vacuum chemical epitaxy (VCE) are investigated by low-temperature photoluminescence. A qualitative relation between the growth parameters and the shallow-impurity-incorporation mechanism is established. It was observed that the predominant shallow acceptor is carbon, and its incorporation during the growth process decreases with the As:Ga ratio, increases with growth temperature until 750°C, and then it diminishes. In this work we compare the characteristics observed in the VCE system with those in conventional molecular-beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD). Our results show that this system contains some advantages from both the MBE and MOCVD systems. The photoluminescence spectra also show that at low As:Ga ratios the generation of As vacancies or its complexes is strongly enhanced.

AB - GaAs layers grown by vacuum chemical epitaxy (VCE) are investigated by low-temperature photoluminescence. A qualitative relation between the growth parameters and the shallow-impurity-incorporation mechanism is established. It was observed that the predominant shallow acceptor is carbon, and its incorporation during the growth process decreases with the As:Ga ratio, increases with growth temperature until 750°C, and then it diminishes. In this work we compare the characteristics observed in the VCE system with those in conventional molecular-beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD). Our results show that this system contains some advantages from both the MBE and MOCVD systems. The photoluminescence spectra also show that at low As:Ga ratios the generation of As vacancies or its complexes is strongly enhanced.

UR - http://www.scopus.com/inward/record.url?scp=36549101846&partnerID=8YFLogxK

U2 - 10.1063/1.341859

DO - 10.1063/1.341859

M3 - Article

AN - SCOPUS:36549101846

SN - 0021-8979

VL - 64

SP - 1358

EP - 1362

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

ER -

Photoluminescence of GaAs films grown by vacuum chemical epitaxy

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