Photoluminescence microscopy imaging of tensile strained In1-xGaxAsyP1-y/InP quantum wells grown by low-pressure metalorganic vapor phase epitaxy

A. A. Bernussi, W. Carvalho, M. T. Furtado, A. L. Gobbi

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


Tensile strained InGaAsP/InP single quantum wells grown by low pressure metallorganic vapor phase epitaxy (LP-MOVPE) have been analyzed by the real time room temperature integrated photoluminescence microscopy (PLM) images revealed the presence of a large number of dark spots corresponding to spatial regions of reduced luminescence efficiency. The density of dark spots increased by almost an order of magnitude when the tensile strain was varied from ε approximately 0% to ε = -0.65%. Tensile strained quaternary materials obtained with essentially the same structure but employing InP or a lattice-matched quaternary barrier exhibited a remarkable difference in defect generation/propagation mechanisms.

Original languageEnglish
Pages (from-to)402-407
Number of pages6
JournalJournal of Applied Physics
Issue number1
StatePublished - Jul 1999


Dive into the research topics of 'Photoluminescence microscopy imaging of tensile strained In<sub>1-x</sub>Ga<sub>x</sub>As<sub>y</sub>P<sub>1-y</sub>/InP quantum wells grown by low-pressure metalorganic vapor phase epitaxy'. Together they form a unique fingerprint.

Cite this