Abstract
Tensile strained InGaAsP/InP single quantum wells grown by low pressure metallorganic vapor phase epitaxy (LP-MOVPE) have been analyzed by the real time room temperature integrated photoluminescence microscopy (PLM) images revealed the presence of a large number of dark spots corresponding to spatial regions of reduced luminescence efficiency. The density of dark spots increased by almost an order of magnitude when the tensile strain was varied from ε approximately 0% to ε = -0.65%. Tensile strained quaternary materials obtained with essentially the same structure but employing InP or a lattice-matched quaternary barrier exhibited a remarkable difference in defect generation/propagation mechanisms.
Original language | English |
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Pages (from-to) | 402-407 |
Number of pages | 6 |
Journal | Journal of Applied Physics |
Volume | 86 |
Issue number | 1 |
DOIs | |
State | Published - Jul 1999 |