Photoluminescence from Gd-implanted AlN and GaN epilayers

John M. Zavada, Neeraj Nepal, J. Lin, K. H. Kim, H. X. Jiang, J. Hite, G. T. Thaler, R. M. Frazier, C. R. Abernathy, S. J. Pearton

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


Recent experiments have shown that rare earth-doped III-V nitride thin films have ferromagnetic properties that have potential impact on spintronic devices. Here we report on ferromagnetic behavior and optical spectroscopy of Gd-implanted GaN and AlN thin films. The AlN samples exhibit both luminescence and magnetic behavior at room temperature. Results indicate that magnetic and optical functionality on a single chip may be possible.

Original languageEnglish
Title of host publicationAdvances in III-V Nitride Semiconductor Materials and Devices
PublisherMaterials Research Society
Number of pages4
ISBN (Print)9781604234114
StatePublished - 2006
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 27 2006Dec 1 2006

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Conference2006 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA


Dive into the research topics of 'Photoluminescence from Gd-implanted AlN and GaN epilayers'. Together they form a unique fingerprint.

Cite this