@inproceedings{3314183e38d34e878d630d1896652280,
title = "Photoluminescence from Gd-implanted AlN and GaN epilayers",
abstract = "Recent experiments have shown that rare earth-doped III-V nitride thin films have ferromagnetic properties that have potential impact on spintronic devices. Here we report on ferromagnetic behavior and optical spectroscopy of Gd-implanted GaN and AlN thin films. The AlN samples exhibit both luminescence and magnetic behavior at room temperature. Results indicate that magnetic and optical functionality on a single chip may be possible.",
author = "Zavada, {John M.} and Neeraj Nepal and J. Lin and Kim, {K. H.} and Jiang, {H. X.} and J. Hite and Thaler, {G. T.} and Frazier, {R. M.} and Abernathy, {C. R.} and Pearton, {S. J.}",
year = "2006",
doi = "10.1557/proc-0955-i10-02",
language = "English",
isbn = "9781604234114",
series = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",
pages = "400--403",
booktitle = "Advances in III-V Nitride Semiconductor Materials and Devices",
note = "null ; Conference date: 27-11-2006 Through 01-12-2006",
}