Photoluminescence from Gd-implanted AlN and GaN epilayers

John M. Zavada, Neeraj Nepal, J. Lin, K. H. Kim, H. X. Jiang, J. Hite, G. T. Thaler, R. M. Frazier, C. R. Abernathy, S. J. Pearton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Recent experiments have shown that rare earth-doped III-V nitride thin films have ferromagnetic properties that have potential impact on spintronic devices. Here we report on ferromagnetic behavior and optical spectroscopy of Gd-implanted GaN and AlN thin films. The AlN samples exhibit both luminescence and magnetic behavior at room temperature. Results indicate that magnetic and optical functionality on a single chip may be possible.

Original languageEnglish
Title of host publicationAdvances in III-V Nitride Semiconductor Materials and Devices
PublisherMaterials Research Society
Pages400-403
Number of pages4
ISBN (Print)9781604234114
DOIs
StatePublished - 2006
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 27 2006Dec 1 2006

Publication series

NameMaterials Research Society Symposium Proceedings
Volume955
ISSN (Print)0272-9172

Conference

Conference2006 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/27/0612/1/06

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    Zavada, J. M., Nepal, N., Lin, J., Kim, K. H., Jiang, H. X., Hite, J., Thaler, G. T., Frazier, R. M., Abernathy, C. R., & Pearton, S. J. (2006). Photoluminescence from Gd-implanted AlN and GaN epilayers. In Advances in III-V Nitride Semiconductor Materials and Devices (pp. 400-403). (Materials Research Society Symposium Proceedings; Vol. 955). Materials Research Society. https://doi.org/10.1557/proc-0955-i10-02