Photoluminescence from Gd-implanted AlN and GaN epilayers

John M. Zavada; Neeraj Nepal; J. Lin; K. H. Kim; H. X. Jiang; J. Hite; G. T. Thaler; R. M. Frazier; C. R. Abernathy; S. J. Pearton

doi:10.1557/proc-0955-i10-02

Photoluminescence from Gd-implanted AlN and GaN epilayers

John M. Zavada, Neeraj Nepal, J. Lin, K. H. Kim, H. X. Jiang, J. Hite, G. T. Thaler, R. M. Frazier, C. R. Abernathy, S. J. Pearton

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Recent experiments have shown that rare earth-doped III-V nitride thin films have ferromagnetic properties that have potential impact on spintronic devices. Here we report on ferromagnetic behavior and optical spectroscopy of Gd-implanted GaN and AlN thin films. The AlN samples exhibit both luminescence and magnetic behavior at room temperature. Results indicate that magnetic and optical functionality on a single chip may be possible.

Original language	English
Title of host publication	Advances in III-V Nitride Semiconductor Materials and Devices
Publisher	Materials Research Society
Pages	400-403
Number of pages	4
ISBN (Print)	9781604234114
DOIs	https://doi.org/10.1557/proc-0955-i10-02
State	Published - 2006
Event	2006 MRS Fall Meeting - Boston, MA, United States Duration: Nov 27 2006 → Dec 1 2006

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	955
ISSN (Print)	0272-9172

Conference

Conference	2006 MRS Fall Meeting
Country	United States
City	Boston, MA
Period	11/27/06 → 12/1/06

Access to Document

10.1557/proc-0955-i10-02

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Zavada, J. M., Nepal, N., Lin, J., Kim, K. H., Jiang, H. X., Hite, J., Thaler, G. T., Frazier, R. M., Abernathy, C. R., & Pearton, S. J. (2006). Photoluminescence from Gd-implanted AlN and GaN epilayers. In Advances in III-V Nitride Semiconductor Materials and Devices (pp. 400-403). (Materials Research Society Symposium Proceedings; Vol. 955). Materials Research Society. https://doi.org/10.1557/proc-0955-i10-02

Zavada, John M. ; Nepal, Neeraj ; Lin, J. ; Kim, K. H. ; Jiang, H. X. ; Hite, J. ; Thaler, G. T. ; Frazier, R. M. ; Abernathy, C. R. ; Pearton, S. J. / Photoluminescence from Gd-implanted AlN and GaN epilayers. Advances in III-V Nitride Semiconductor Materials and Devices. Materials Research Society, 2006. pp. 400-403 (Materials Research Society Symposium Proceedings).

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title = "Photoluminescence from Gd-implanted AlN and GaN epilayers",

abstract = "Recent experiments have shown that rare earth-doped III-V nitride thin films have ferromagnetic properties that have potential impact on spintronic devices. Here we report on ferromagnetic behavior and optical spectroscopy of Gd-implanted GaN and AlN thin films. The AlN samples exhibit both luminescence and magnetic behavior at room temperature. Results indicate that magnetic and optical functionality on a single chip may be possible.",

author = "Zavada, {John M.} and Neeraj Nepal and J. Lin and Kim, {K. H.} and Jiang, {H. X.} and J. Hite and Thaler, {G. T.} and Frazier, {R. M.} and Abernathy, {C. R.} and Pearton, {S. J.}",

year = "2006",

doi = "10.1557/proc-0955-i10-02",

language = "English",

isbn = "9781604234114",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "400--403",

booktitle = "Advances in III-V Nitride Semiconductor Materials and Devices",

note = "null ; Conference date: 27-11-2006 Through 01-12-2006",

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Zavada, JM, Nepal, N, Lin, J, Kim, KH, Jiang, HX, Hite, J, Thaler, GT, Frazier, RM, Abernathy, CR & Pearton, SJ 2006, Photoluminescence from Gd-implanted AlN and GaN epilayers. in Advances in III-V Nitride Semiconductor Materials and Devices. Materials Research Society Symposium Proceedings, vol. 955, Materials Research Society, pp. 400-403, 2006 MRS Fall Meeting, Boston, MA, United States, 11/27/06. https://doi.org/10.1557/proc-0955-i10-02

Photoluminescence from Gd-implanted AlN and GaN epilayers. / Zavada, John M.; Nepal, Neeraj; Lin, J.; Kim, K. H.; Jiang, H. X.; Hite, J.; Thaler, G. T.; Frazier, R. M.; Abernathy, C. R.; Pearton, S. J.

Advances in III-V Nitride Semiconductor Materials and Devices. Materials Research Society, 2006. p. 400-403 (Materials Research Society Symposium Proceedings; Vol. 955).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Photoluminescence from Gd-implanted AlN and GaN epilayers

AU - Zavada, John M.

AU - Nepal, Neeraj

AU - Lin, J.

AU - Kim, K. H.

AU - Jiang, H. X.

AU - Hite, J.

AU - Thaler, G. T.

AU - Frazier, R. M.

AU - Abernathy, C. R.

AU - Pearton, S. J.

PY - 2006

Y1 - 2006

N2 - Recent experiments have shown that rare earth-doped III-V nitride thin films have ferromagnetic properties that have potential impact on spintronic devices. Here we report on ferromagnetic behavior and optical spectroscopy of Gd-implanted GaN and AlN thin films. The AlN samples exhibit both luminescence and magnetic behavior at room temperature. Results indicate that magnetic and optical functionality on a single chip may be possible.

AB - Recent experiments have shown that rare earth-doped III-V nitride thin films have ferromagnetic properties that have potential impact on spintronic devices. Here we report on ferromagnetic behavior and optical spectroscopy of Gd-implanted GaN and AlN thin films. The AlN samples exhibit both luminescence and magnetic behavior at room temperature. Results indicate that magnetic and optical functionality on a single chip may be possible.

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DO - 10.1557/proc-0955-i10-02

M3 - Conference contribution

AN - SCOPUS:40949138939

SN - 9781604234114

T3 - Materials Research Society Symposium Proceedings

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BT - Advances in III-V Nitride Semiconductor Materials and Devices

PB - Materials Research Society

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