Photoluminescence centers associated with noble-gas impurities in silicon

Stefan K. Estreicher, Joerg Weber

Research output: Contribution to journalArticlepeer-review


The implantation of noble-gas (NG) ions into Si followed by an anneal results in the formation of defects observed by photoluminescence (PL). The defects grow at the expense of the PL band at 1018 meV. This paper discusses the results of calculations which involve the NG atom and vacancies. The results explain many of the observed features of the NG-related centers and imply that the 1018 meV band is associated with the neutral divacancy. Theory suggests that Xe should be covalently bound in a divacancy and behave differently from the other NG complexes.

Original languageEnglish
Pages (from-to)605-610
Number of pages6
JournalMaterials Science Forum
Issue numberPART 1
StatePublished - 1997


  • Noble-gas impurities
  • Photoluminescence
  • Silicon
  • Theory
  • Vacancies


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