Phonon decay in GaN and AlN and self-heating in III-N devices

M. Holtz, D. Y. Song, S. A. Nikishin, V. Soukhoveev, A. Usikov, V. Dmitriev, E. Mokhov, U. Makarov, H. Helava

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


We report studies of the temperature dependence of Raman lines in high quality GaN and AlN. The temperature dependence of the phonon energies and linewidths are used to produce consistent phonon decay properties of zone center optic phonons. In GaN we observe the E22 phonon to decay into three phonons, while the A1(LO) phonon is well described according to the so-called Ridley process-one TO and one LA phonon. For AlN the E22 phonon decays by two phonon emission and the A1(LO) line also exhibits a dependence consistent with the Ridley process. Along with the phonon decay processes, it is important in each case to take into account the contribution of the thermal expansion, including the temperature dependence, to describe observed temperature shifts in the phonon properties.

Original languageEnglish
Title of host publicationAdvances in III-V Nitride Semiconductor Materials and Devices
PublisherMaterials Research Society
Number of pages6
ISBN (Print)9781604234114
StatePublished - 2006
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 27 2006Dec 1 2006

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Conference2006 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA


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