TY - GEN
T1 - Phonon decay in GaN and AlN and self-heating in III-N devices
AU - Holtz, M.
AU - Song, D. Y.
AU - Nikishin, S. A.
AU - Soukhoveev, V.
AU - Usikov, A.
AU - Dmitriev, V.
AU - Mokhov, E.
AU - Makarov, U.
AU - Helava, H.
PY - 2006
Y1 - 2006
N2 - We report studies of the temperature dependence of Raman lines in high quality GaN and AlN. The temperature dependence of the phonon energies and linewidths are used to produce consistent phonon decay properties of zone center optic phonons. In GaN we observe the E22 phonon to decay into three phonons, while the A1(LO) phonon is well described according to the so-called Ridley process-one TO and one LA phonon. For AlN the E22 phonon decays by two phonon emission and the A1(LO) line also exhibits a dependence consistent with the Ridley process. Along with the phonon decay processes, it is important in each case to take into account the contribution of the thermal expansion, including the temperature dependence, to describe observed temperature shifts in the phonon properties.
AB - We report studies of the temperature dependence of Raman lines in high quality GaN and AlN. The temperature dependence of the phonon energies and linewidths are used to produce consistent phonon decay properties of zone center optic phonons. In GaN we observe the E22 phonon to decay into three phonons, while the A1(LO) phonon is well described according to the so-called Ridley process-one TO and one LA phonon. For AlN the E22 phonon decays by two phonon emission and the A1(LO) line also exhibits a dependence consistent with the Ridley process. Along with the phonon decay processes, it is important in each case to take into account the contribution of the thermal expansion, including the temperature dependence, to describe observed temperature shifts in the phonon properties.
UR - http://www.scopus.com/inward/record.url?scp=40949102316&partnerID=8YFLogxK
U2 - 10.1557/proc-0955-i12-11
DO - 10.1557/proc-0955-i12-11
M3 - Conference contribution
AN - SCOPUS:40949102316
SN - 9781604234114
T3 - Materials Research Society Symposium Proceedings
SP - 354
EP - 359
BT - Advances in III-V Nitride Semiconductor Materials and Devices
PB - Materials Research Society
T2 - 2006 MRS Fall Meeting
Y2 - 27 November 2006 through 1 December 2006
ER -