Phonon-assisted recombination in GaAs/AlGaAs multiple-quantum-well structures

H. H. Dai; M. S. Choi; M. A. Gundersen; H. C. Lee; P. D. Dapkus; Charles W. Myles

doi:10.1063/1.344244

Phonon-assisted recombination in GaAs/AlGaAs multiple-quantum-well structures

H. H. Dai, M. S. Choi, M. A. Gundersen, H. C. Lee, P. D. Dapkus, Charles W. Myles

Physics

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2 Scopus citations

Abstract

The photoluminescence spectra of GaAs/AlGaAs multiple-quantum-well structures with varying thicknesses have been studied as a function of excitation intensity and polarization. An intense sideband luminescence with a narrow linewidth is observed at 36 meV below the band-to-band transition in all samples. These results, along with additional investigations detailed in this paper, support the conclusion that for the samples studied in these experiments this emission is a stimulated phonon-assisted recombination.

Original language	English
Pages (from-to)	2538-2541
Number of pages	4
Journal	Journal of Applied Physics
Volume	66
Issue number	6
DOIs	https://doi.org/10.1063/1.344244
State	Published - 1989

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title = "Phonon-assisted recombination in GaAs/AlGaAs multiple-quantum-well structures",

abstract = "The photoluminescence spectra of GaAs/AlGaAs multiple-quantum-well structures with varying thicknesses have been studied as a function of excitation intensity and polarization. An intense sideband luminescence with a narrow linewidth is observed at 36 meV below the band-to-band transition in all samples. These results, along with additional investigations detailed in this paper, support the conclusion that for the samples studied in these experiments this emission is a stimulated phonon-assisted recombination.",

author = "Dai, {H. H.} and Choi, {M. S.} and Gundersen, {M. A.} and Lee, {H. C.} and Dapkus, {P. D.} and Myles, {Charles W.}",

year = "1989",

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volume = "66",

pages = "2538--2541",

journal = "Journal of Applied Physics",

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AU - Dai, H. H.

AU - Choi, M. S.

AU - Gundersen, M. A.

AU - Lee, H. C.

AU - Dapkus, P. D.

AU - Myles, Charles W.

PY - 1989

Y1 - 1989

N2 - The photoluminescence spectra of GaAs/AlGaAs multiple-quantum-well structures with varying thicknesses have been studied as a function of excitation intensity and polarization. An intense sideband luminescence with a narrow linewidth is observed at 36 meV below the band-to-band transition in all samples. These results, along with additional investigations detailed in this paper, support the conclusion that for the samples studied in these experiments this emission is a stimulated phonon-assisted recombination.

AB - The photoluminescence spectra of GaAs/AlGaAs multiple-quantum-well structures with varying thicknesses have been studied as a function of excitation intensity and polarization. An intense sideband luminescence with a narrow linewidth is observed at 36 meV below the band-to-band transition in all samples. These results, along with additional investigations detailed in this paper, support the conclusion that for the samples studied in these experiments this emission is a stimulated phonon-assisted recombination.

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DO - 10.1063/1.344244

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

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ER -

Phonon-assisted recombination in GaAs/AlGaAs multiple-quantum-well structures

Abstract

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