Abstract
The photoluminescence spectra of GaAs/AlGaAs multiple-quantum-well structures with varying thicknesses have been studied as a function of excitation intensity and polarization. An intense sideband luminescence with a narrow linewidth is observed at 36 meV below the band-to-band transition in all samples. These results, along with additional investigations detailed in this paper, support the conclusion that for the samples studied in these experiments this emission is a stimulated phonon-assisted recombination.
Original language | English |
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Pages (from-to) | 2538-2541 |
Number of pages | 4 |
Journal | Journal of Applied Physics |
Volume | 66 |
Issue number | 6 |
DOIs | |
State | Published - 1989 |