Phonon-assisted recombination in GaAs/AlGaAs multiple-quantum-well structures

H. H. Dai, M. S. Choi, M. A. Gundersen, H. C. Lee, P. D. Dapkus, Charles W. Myles

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


The photoluminescence spectra of GaAs/AlGaAs multiple-quantum-well structures with varying thicknesses have been studied as a function of excitation intensity and polarization. An intense sideband luminescence with a narrow linewidth is observed at 36 meV below the band-to-band transition in all samples. These results, along with additional investigations detailed in this paper, support the conclusion that for the samples studied in these experiments this emission is a stimulated phonon-assisted recombination.

Original languageEnglish
Pages (from-to)2538-2541
Number of pages4
JournalJournal of Applied Physics
Issue number6
StatePublished - 1989


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