Phase noise analysis of fully-integrated digitally-tuned wideband Si/SiGe BiCMOs VCOs

D. Y.C. Lie, X. Yuan, L. E. Larson, T. Robinson, A. Senior, J. Mecke, X. Wang

Research output: Contribution to conferencePaper

5 Scopus citations

Abstract

A 3.4-4.6 GHz fully monolithic Voltage-Controlled Oscillator (VCO) was designed and manufactured using Silicon Germanium (SiGe) BiCMOS technology. The large tuning range (33%) and low-phase noise (-108 dBc/Hz @100 kHz offset at 3.4 GHz) are achieved with a combination of coarse tuning via digital selection of MOSCAPs and analog finetuning using P-N junction varactors. Approximately 7-10 dB phase noise degradation at 3 MHz offset is observed as the oscillator is digitally switched from the lowest frequency band to the highest band. The role substrate parasitics play on the behavior of phase noise during digital switching is clarified.

Original languageEnglish
Pages65-68
Number of pages4
StatePublished - 2002
Event2002 IEEE Biopolar/BicMOS and Technology Meeting - Minneapolis, United States
Duration: Sep 29 2002Oct 1 2002

Conference

Conference2002 IEEE Biopolar/BicMOS and Technology Meeting
CountryUnited States
CityMinneapolis
Period09/29/0210/1/02

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    Lie, D. Y. C., Yuan, X., Larson, L. E., Robinson, T., Senior, A., Mecke, J., & Wang, X. (2002). Phase noise analysis of fully-integrated digitally-tuned wideband Si/SiGe BiCMOs VCOs. 65-68. Paper presented at 2002 IEEE Biopolar/BicMOS and Technology Meeting, Minneapolis, United States.