Phase noise analysis of fully-integrated digitally-tuned wideband Si/SiGe BiCMOs VCOs

D. Y.C. Lie; X. Yuan; L. E. Larson; T. Robinson; A. Senior; J. Mecke; X. Wang

Phase noise analysis of fully-integrated digitally-tuned wideband Si/SiGe BiCMOs VCOs

D. Y.C. Lie, X. Yuan, L. E. Larson, T. Robinson, A. Senior, J. Mecke, X. Wang

Electrical and Computer Engineering

Research output: Contribution to conference › Paper › peer-review

5 Scopus citations

Abstract

A 3.4-4.6 GHz fully monolithic Voltage-Controlled Oscillator (VCO) was designed and manufactured using Silicon Germanium (SiGe) BiCMOS technology. The large tuning range (33%) and low-phase noise (-108 dBc/Hz @100 kHz offset at 3.4 GHz) are achieved with a combination of coarse tuning via digital selection of MOSCAPs and analog finetuning using P-N junction varactors. Approximately 7-10 dB phase noise degradation at 3 MHz offset is observed as the oscillator is digitally switched from the lowest frequency band to the highest band. The role substrate parasitics play on the behavior of phase noise during digital switching is clarified.

Original language	English
Pages	65-68
Number of pages	4
State	Published - 2002
Event	2002 IEEE Biopolar/BicMOS and Technology Meeting - Minneapolis, United States Duration: Sep 29 2002 → Oct 1 2002

Conference

Conference	2002 IEEE Biopolar/BicMOS and Technology Meeting
Country/Territory	United States
City	Minneapolis
Period	09/29/02 → 10/1/02

Cite this

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title = "Phase noise analysis of fully-integrated digitally-tuned wideband Si/SiGe BiCMOs VCOs",

abstract = "A 3.4-4.6 GHz fully monolithic Voltage-Controlled Oscillator (VCO) was designed and manufactured using Silicon Germanium (SiGe) BiCMOS technology. The large tuning range (33%) and low-phase noise (-108 dBc/Hz @100 kHz offset at 3.4 GHz) are achieved with a combination of coarse tuning via digital selection of MOSCAPs and analog finetuning using P-N junction varactors. Approximately 7-10 dB phase noise degradation at 3 MHz offset is observed as the oscillator is digitally switched from the lowest frequency band to the highest band. The role substrate parasitics play on the behavior of phase noise during digital switching is clarified.",

author = "Lie, {D. Y.C.} and X. Yuan and Larson, {L. E.} and T. Robinson and A. Senior and J. Mecke and X. Wang",

year = "2002",

language = "English",

pages = "65--68",

note = "2002 IEEE Biopolar/BicMOS and Technology Meeting ; Conference date: 29-09-2002 Through 01-10-2002",

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TY - CONF

T1 - Phase noise analysis of fully-integrated digitally-tuned wideband Si/SiGe BiCMOs VCOs

AU - Lie, D. Y.C.

AU - Yuan, X.

AU - Larson, L. E.

AU - Robinson, T.

AU - Senior, A.

AU - Mecke, J.

AU - Wang, X.

PY - 2002

Y1 - 2002

N2 - A 3.4-4.6 GHz fully monolithic Voltage-Controlled Oscillator (VCO) was designed and manufactured using Silicon Germanium (SiGe) BiCMOS technology. The large tuning range (33%) and low-phase noise (-108 dBc/Hz @100 kHz offset at 3.4 GHz) are achieved with a combination of coarse tuning via digital selection of MOSCAPs and analog finetuning using P-N junction varactors. Approximately 7-10 dB phase noise degradation at 3 MHz offset is observed as the oscillator is digitally switched from the lowest frequency band to the highest band. The role substrate parasitics play on the behavior of phase noise during digital switching is clarified.

AB - A 3.4-4.6 GHz fully monolithic Voltage-Controlled Oscillator (VCO) was designed and manufactured using Silicon Germanium (SiGe) BiCMOS technology. The large tuning range (33%) and low-phase noise (-108 dBc/Hz @100 kHz offset at 3.4 GHz) are achieved with a combination of coarse tuning via digital selection of MOSCAPs and analog finetuning using P-N junction varactors. Approximately 7-10 dB phase noise degradation at 3 MHz offset is observed as the oscillator is digitally switched from the lowest frequency band to the highest band. The role substrate parasitics play on the behavior of phase noise during digital switching is clarified.

UR - http://www.scopus.com/inward/record.url?scp=0036439940&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0036439940

SP - 65

EP - 68

T2 - 2002 IEEE Biopolar/BicMOS and Technology Meeting

Y2 - 29 September 2002 through 1 October 2002

ER -

Phase noise analysis of fully-integrated digitally-tuned wideband Si/SiGe BiCMOs VCOs

Abstract

Conference

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