Abstract
Persistent photoconductivity (PPC) effect has been observed in p-type GaN epilayers grown both by metal-organic chemical vapor deposition (MOCVD) and reactive molecular beam epitaxy (MBE) as well as in a two-dimensional electron gas (2DEG) system formed by an AlGaN/GaN heterostructure grown by MOCVD. Its properties have been investigated at different conditions.
Original language | English |
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Pages (from-to) | 537-542 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 449 |
State | Published - 1997 |
Event | Proceedings of the 1996 MRS Fall Symposium - Boston, MA, USA Duration: Dec 2 1996 → Dec 6 1996 |