Persistent photoconductivity in p-type GaN epilayers and n-type AlGaN/GaN heterostructures

J. Z. Li, J. Y. Lin, H. X. Jiang, M. A. Khan, Q. Chen, A. Salvador, A. Botchkarev, H. Morkoc

Research output: Contribution to journalConference article

Abstract

Persistent photoconductivity (PPC) effect has been observed in p-type GaN epilayers grown both by metal-organic chemical vapor deposition (MOCVD) and reactive molecular beam epitaxy (MBE) as well as in a two-dimensional electron gas (2DEG) system formed by an AlGaN/GaN heterostructure grown by MOCVD. Its properties have been investigated at different conditions.

Original languageEnglish
Pages (from-to)537-542
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume449
StatePublished - 1997
EventProceedings of the 1996 MRS Fall Symposium - Boston, MA, USA
Duration: Dec 2 1996Dec 6 1996

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