TY - GEN
T1 - Performance Comparison of Commercial Gan Hemt under Repetitive Overcurrent Operations
AU - Rodriguez, Jose A.
AU - Kim, Matthew
AU - Bayne, Stephen B.
AU - O'Brien, Heather
AU - Ogunniyi, Aderinto
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/6
Y1 - 2019/6
N2 - Gallium nitride (GaN) high-electron-mobility transistors (HEMT) are of great interest for pulsed power applications due to their proven capabilities in RF applications. With further advances in GaN power semiconductors, there's an interest in the evaluation of their performance under repetitive overcurrent operation in power electronics applications beyond the manufacturer's prescribed operating parameters. A GaN HEMT from two different vendors were evaluated in a pulsed ring down testbed at 475 V with a peak current above 80 A over a repetition rate of 138 Hz. The testbed employed a temperature chamber to adjust the case temperature of the device during testing. The devices' electrical characteristics, such as transconductance, forward I-V curve and reverse blocking voltage were measured throughout testing and have not shown significant degradation. The collected data from these measurements allowed a comparison of the devices' performance and shows their ability to handle transient overcurrent conditions commonly found in power semiconductor device applications.
AB - Gallium nitride (GaN) high-electron-mobility transistors (HEMT) are of great interest for pulsed power applications due to their proven capabilities in RF applications. With further advances in GaN power semiconductors, there's an interest in the evaluation of their performance under repetitive overcurrent operation in power electronics applications beyond the manufacturer's prescribed operating parameters. A GaN HEMT from two different vendors were evaluated in a pulsed ring down testbed at 475 V with a peak current above 80 A over a repetition rate of 138 Hz. The testbed employed a temperature chamber to adjust the case temperature of the device during testing. The devices' electrical characteristics, such as transconductance, forward I-V curve and reverse blocking voltage were measured throughout testing and have not shown significant degradation. The collected data from these measurements allowed a comparison of the devices' performance and shows their ability to handle transient overcurrent conditions commonly found in power semiconductor device applications.
UR - http://www.scopus.com/inward/record.url?scp=85081567354&partnerID=8YFLogxK
U2 - 10.1109/PPPS34859.2019.9009755
DO - 10.1109/PPPS34859.2019.9009755
M3 - Conference contribution
AN - SCOPUS:85081567354
T3 - IEEE International Pulsed Power Conference
BT - 2019 IEEE Pulsed Power and Plasma Science, PPPS 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 IEEE Pulsed Power and Plasma Science, PPPS 2019
Y2 - 23 June 2019 through 29 June 2019
ER -