Performance Comparison of Commercial Gan Hemt under Repetitive Overcurrent Operations

Jose A. Rodriguez, Matthew Kim, Stephen B. Bayne, Heather O'Brien, Aderinto Ogunniyi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Gallium nitride (GaN) high-electron-mobility transistors (HEMT) are of great interest for pulsed power applications due to their proven capabilities in RF applications. With further advances in GaN power semiconductors, there's an interest in the evaluation of their performance under repetitive overcurrent operation in power electronics applications beyond the manufacturer's prescribed operating parameters. A GaN HEMT from two different vendors were evaluated in a pulsed ring down testbed at 475 V with a peak current above 80 A over a repetition rate of 138 Hz. The testbed employed a temperature chamber to adjust the case temperature of the device during testing. The devices' electrical characteristics, such as transconductance, forward I-V curve and reverse blocking voltage were measured throughout testing and have not shown significant degradation. The collected data from these measurements allowed a comparison of the devices' performance and shows their ability to handle transient overcurrent conditions commonly found in power semiconductor device applications.

Original languageEnglish
Title of host publication2019 IEEE Pulsed Power and Plasma Science, PPPS 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538679692
DOIs
StatePublished - Jun 2019
Event2019 IEEE Pulsed Power and Plasma Science, PPPS 2019 - Orlando, United States
Duration: Jun 23 2019Jun 29 2019

Publication series

NameIEEE International Pulsed Power Conference
Volume2019-June
ISSN (Print)2158-4915
ISSN (Electronic)2158-4923

Conference

Conference2019 IEEE Pulsed Power and Plasma Science, PPPS 2019
CountryUnited States
CityOrlando
Period06/23/1906/29/19

Fingerprint Dive into the research topics of 'Performance Comparison of Commercial Gan Hemt under Repetitive Overcurrent Operations'. Together they form a unique fingerprint.

Cite this