Performance and optimization of a 50 kV silicon carbide photoconductive semiconductor switch for pulsed power applications

Cameron Hettler, William W. Sullivan, James Dickens, Andreas Neuber

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

A 50 kV silicon carbide photoconductive semiconductor switch (PCSS) is presented. The SiC PCSS device is fabricated from semi-insulating 4H-SiC in a newly-proposed rear-illuminated, radial switch structure. The improved structure reduces the peak electric field within the switch, extending the blocking voltage to over 50 kVdc. Electrostatic field simulations of the PCSS are presented along with experimental blocking curves. The PCSS demonstrated low on-state resistance, delivering over 27 MW of peak power into a 31 ω load. Device modeling was performed to further optimize the switch for peak efficiency when illuminated with 355 nm light, a common laser wavelength. The switch structure was modified for peak operation at 355 nm and the experimental and theoretical results are compared.

Original languageEnglish
Title of host publicationProceedings of the 2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012
Pages70-72
Number of pages3
DOIs
StatePublished - 2012
Event2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012 - San Diego, CA, United States
Duration: Jun 3 2012Jun 7 2012

Publication series

NameProceedings of the 2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012

Conference

Conference2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012
CountryUnited States
CitySan Diego, CA
Period06/3/1206/7/12

Keywords

  • High voltage switch
  • Photoconductive semiconductor switch
  • Silicon carbide

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    Hettler, C., Sullivan, W. W., Dickens, J., & Neuber, A. (2012). Performance and optimization of a 50 kV silicon carbide photoconductive semiconductor switch for pulsed power applications. In Proceedings of the 2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012 (pp. 70-72). [6518682] (Proceedings of the 2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012). https://doi.org/10.1109/IPMHVC.2012.6518682