Performance and optimization of a 50 kV silicon carbide photoconductive semiconductor switch for pulsed power applications

Cameron Hettler; William W. Sullivan; James Dickens; Andreas Neuber

doi:10.1109/IPMHVC.2012.6518682

Performance and optimization of a 50 kV silicon carbide photoconductive semiconductor switch for pulsed power applications

Cameron Hettler, William W. Sullivan, James Dickens, Andreas Neuber

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Scopus citations

Abstract

A 50 kV silicon carbide photoconductive semiconductor switch (PCSS) is presented. The SiC PCSS device is fabricated from semi-insulating 4H-SiC in a newly-proposed rear-illuminated, radial switch structure. The improved structure reduces the peak electric field within the switch, extending the blocking voltage to over 50 kVdc. Electrostatic field simulations of the PCSS are presented along with experimental blocking curves. The PCSS demonstrated low on-state resistance, delivering over 27 MW of peak power into a 31 ω load. Device modeling was performed to further optimize the switch for peak efficiency when illuminated with 355 nm light, a common laser wavelength. The switch structure was modified for peak operation at 355 nm and the experimental and theoretical results are compared.

Original language	English
Title of host publication	Proceedings of the 2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012
Pages	70-72
Number of pages	3
DOIs	https://doi.org/10.1109/IPMHVC.2012.6518682
State	Published - 2012
Event	2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012 - San Diego, CA, United States Duration: Jun 3 2012 → Jun 7 2012

Publication series

Name	Proceedings of the 2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012

Conference

Conference	2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012
Country/Territory	United States
City	San Diego, CA
Period	06/3/12 → 06/7/12

Keywords

High voltage switch
Photoconductive semiconductor switch
Silicon carbide

Access to Document

10.1109/IPMHVC.2012.6518682

Cite this

Hettler, C., Sullivan, W. W., Dickens, J., & Neuber, A. (2012). Performance and optimization of a 50 kV silicon carbide photoconductive semiconductor switch for pulsed power applications. In Proceedings of the 2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012 (pp. 70-72). [6518682] (Proceedings of the 2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012). https://doi.org/10.1109/IPMHVC.2012.6518682

Hettler, Cameron ; Sullivan, William W. ; Dickens, James et al. / Performance and optimization of a 50 kV silicon carbide photoconductive semiconductor switch for pulsed power applications. Proceedings of the 2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012. 2012. pp. 70-72 (Proceedings of the 2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012).

@inproceedings{5d7e04b2d19746ab9603898ecf5b71bd,

title = "Performance and optimization of a 50 kV silicon carbide photoconductive semiconductor switch for pulsed power applications",

abstract = "A 50 kV silicon carbide photoconductive semiconductor switch (PCSS) is presented. The SiC PCSS device is fabricated from semi-insulating 4H-SiC in a newly-proposed rear-illuminated, radial switch structure. The improved structure reduces the peak electric field within the switch, extending the blocking voltage to over 50 kVdc. Electrostatic field simulations of the PCSS are presented along with experimental blocking curves. The PCSS demonstrated low on-state resistance, delivering over 27 MW of peak power into a 31 ω load. Device modeling was performed to further optimize the switch for peak efficiency when illuminated with 355 nm light, a common laser wavelength. The switch structure was modified for peak operation at 355 nm and the experimental and theoretical results are compared.",

keywords = "High voltage switch, Photoconductive semiconductor switch, Silicon carbide",

author = "Cameron Hettler and Sullivan, {William W.} and James Dickens and Andreas Neuber",

year = "2012",

doi = "10.1109/IPMHVC.2012.6518682",

language = "English",

isbn = "9781467312233",

series = "Proceedings of the 2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012",

pages = "70--72",

booktitle = "Proceedings of the 2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012",

note = "null ; Conference date: 03-06-2012 Through 07-06-2012",

}

Hettler, C, Sullivan, WW, Dickens, J & Neuber, A 2012, Performance and optimization of a 50 kV silicon carbide photoconductive semiconductor switch for pulsed power applications. in Proceedings of the 2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012., 6518682, Proceedings of the 2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012, pp. 70-72, 2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012, San Diego, CA, United States, 06/3/12. https://doi.org/10.1109/IPMHVC.2012.6518682

Performance and optimization of a 50 kV silicon carbide photoconductive semiconductor switch for pulsed power applications. / Hettler, Cameron; Sullivan, William W.; Dickens, James et al.

Proceedings of the 2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012. 2012. p. 70-72 6518682 (Proceedings of the 2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Hettler, Cameron

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AU - Dickens, James

AU - Neuber, Andreas

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N2 - A 50 kV silicon carbide photoconductive semiconductor switch (PCSS) is presented. The SiC PCSS device is fabricated from semi-insulating 4H-SiC in a newly-proposed rear-illuminated, radial switch structure. The improved structure reduces the peak electric field within the switch, extending the blocking voltage to over 50 kVdc. Electrostatic field simulations of the PCSS are presented along with experimental blocking curves. The PCSS demonstrated low on-state resistance, delivering over 27 MW of peak power into a 31 ω load. Device modeling was performed to further optimize the switch for peak efficiency when illuminated with 355 nm light, a common laser wavelength. The switch structure was modified for peak operation at 355 nm and the experimental and theoretical results are compared.

AB - A 50 kV silicon carbide photoconductive semiconductor switch (PCSS) is presented. The SiC PCSS device is fabricated from semi-insulating 4H-SiC in a newly-proposed rear-illuminated, radial switch structure. The improved structure reduces the peak electric field within the switch, extending the blocking voltage to over 50 kVdc. Electrostatic field simulations of the PCSS are presented along with experimental blocking curves. The PCSS demonstrated low on-state resistance, delivering over 27 MW of peak power into a 31 ω load. Device modeling was performed to further optimize the switch for peak efficiency when illuminated with 355 nm light, a common laser wavelength. The switch structure was modified for peak operation at 355 nm and the experimental and theoretical results are compared.

KW - High voltage switch

KW - Photoconductive semiconductor switch

KW - Silicon carbide

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Hettler C, Sullivan WW, Dickens J , Neuber A. Performance and optimization of a 50 kV silicon carbide photoconductive semiconductor switch for pulsed power applications. In Proceedings of the 2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012. 2012. p. 70-72. 6518682. (Proceedings of the 2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012). doi: 10.1109/IPMHVC.2012.6518682

Performance and optimization of a 50 kV silicon carbide photoconductive semiconductor switch for pulsed power applications

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