TY - GEN
T1 - Performance and optimization of a 50 kV silicon carbide photoconductive semiconductor switch for pulsed power applications
AU - Hettler, Cameron
AU - Sullivan, William W.
AU - Dickens, James
AU - Neuber, Andreas
PY - 2012
Y1 - 2012
N2 - A 50 kV silicon carbide photoconductive semiconductor switch (PCSS) is presented. The SiC PCSS device is fabricated from semi-insulating 4H-SiC in a newly-proposed rear-illuminated, radial switch structure. The improved structure reduces the peak electric field within the switch, extending the blocking voltage to over 50 kVdc. Electrostatic field simulations of the PCSS are presented along with experimental blocking curves. The PCSS demonstrated low on-state resistance, delivering over 27 MW of peak power into a 31 ω load. Device modeling was performed to further optimize the switch for peak efficiency when illuminated with 355 nm light, a common laser wavelength. The switch structure was modified for peak operation at 355 nm and the experimental and theoretical results are compared.
AB - A 50 kV silicon carbide photoconductive semiconductor switch (PCSS) is presented. The SiC PCSS device is fabricated from semi-insulating 4H-SiC in a newly-proposed rear-illuminated, radial switch structure. The improved structure reduces the peak electric field within the switch, extending the blocking voltage to over 50 kVdc. Electrostatic field simulations of the PCSS are presented along with experimental blocking curves. The PCSS demonstrated low on-state resistance, delivering over 27 MW of peak power into a 31 ω load. Device modeling was performed to further optimize the switch for peak efficiency when illuminated with 355 nm light, a common laser wavelength. The switch structure was modified for peak operation at 355 nm and the experimental and theoretical results are compared.
KW - High voltage switch
KW - Photoconductive semiconductor switch
KW - Silicon carbide
UR - http://www.scopus.com/inward/record.url?scp=84879913912&partnerID=8YFLogxK
U2 - 10.1109/IPMHVC.2012.6518682
DO - 10.1109/IPMHVC.2012.6518682
M3 - Conference contribution
AN - SCOPUS:84879913912
SN - 9781467312233
T3 - Proceedings of the 2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012
SP - 70
EP - 72
BT - Proceedings of the 2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012
Y2 - 3 June 2012 through 7 June 2012
ER -